DDC124EH-7

DC Current Gain (hFE) (Min) @ Ic, Vce:	56 @ 5mA, 5V
Base Part Number:	DDC124
Supplier Device Package:	SOT-563
Package / Case:	SOT-563, SOT-666
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	22 kOhms
Resistor - Base (R1):	22 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 NPN - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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DDC124EH-7 application field and working principle

The DDC124EH-7 is a Pre-Biased Array Transistor Bipolar Junction Transistor (BJT) by Diodes Incorporated. It is made up of an array of three identical NPN transistors in a common base configuration. This transistor is designed to be used in amplifiers and switches with high voltage and high power range applications.The DDC124EH-7 is a low-power and low-voltage bidirectional transistor that is mainly employed for its high-voltage and high-power range switching capability. This transistor is used in most analog and digital circuits and is suitable for applications where a switch is needed to control a variety of loads.For the DDC124EH-7, operating input voltage is in the range of -20 to +20 volts and the output voltage can vary from -10 to +10 volts. The typical Storage Test Temperature range is from -65 to +150°C. This device is packaged in a 3-pin Surface Mount technology package. The DDC124EH-7\'s working principle lies in its construction. It is built with three identical NPN transistors which are arranged in a common base configuration. The transistors have an emitter-collector path with the base connected to a common emitter-collector path. This configuration allows it to provide high-voltage and high-power switching capabilities which are used in most analog and digital applications.The DDC124EH-7 Pre-Biased Array Transistor can typically provide a switching current of up to 10 A and voltage of up to 500 V. The output side is held under constant current which allows the device to switch efficiently between the positive and negative output ranges. In addition, the base current is controlled by the base-emitter junction which maintains the output current. This feature is useful in applications where high switching frequency is required.The DDC124EH-7 can be used in a range of high voltage and high power applications including: amplifier switching, motor control, voltage regulation, inductive load control, light intensity regulation, and other power supply and switching applications. Its high-voltage capability allows it to be used in a variety of industrial and automotive applications. Overall, the DDC124EH-7 Pre-Biased Array Transistor Bipolar Junction Transistor proves to be a reliable and powerful switching device. It is capable of providing high voltage and high power switching with high efficiency and low power consumption. This devices high voltage capacity, coupled with its low power consumption, makes it a suitable choice for a range of switching and power supply applications. Moreover, its high switching frequency makes it an ideal choice for a range of industrial and automotive applications.

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