DDC123JU-7-F Discrete Semiconductor Products |
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Allicdata Part #: | DDC123JU-FDITR-ND |
Manufacturer Part#: |
DDC123JU-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2NPN PREBIAS 0.2W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | DDC123JU-7-F Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Base Part Number: | DDC123 |
Supplier Device Package: | SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DDC123JU-7-F is a transistor array, which is based on the bipolar junction transistor (BJT) technology. The device consists of seven individual pre-biased NPN transistors in a small surface mount package.
This transistor array is designed to provide high levels of current gain and to be used in low-noise, low-power applications. Each of the seven transistors comes with an integral pre-biased resistor which ensures that the current gain is maintained across all seven transistors.
The DDC123JU-7-F transistor array can be used for a variety of applications, such as buffering, amplification, power switching, and local amplification. It can also be used for a range of signal processing applications, including filtering, delay lines, and audio mixing. In addition, the DDC123JU-7-F can be used in a range of power switching applications, such as DC-DC converters, power regulation, and power monitoring.
The working principle of the DDC123JU-7-F transistor array is based on the bipolar junction transistor (BJT) technology. This technology uses two semiconductor base layers of a type P material, which form the emitter-base and collector-base junctions. When a positive voltage is applied, electrons are released in the emitter-base junction, and when the voltage is removed the current through the junction is reversed. The electrons flow and carry current through the collector-base junction, thus creating a controlled current flow.
The DDC123JU-7-F has been designed so that seven individual BJT transistors are pre-biased and then combined into one package. This provides a greater level of current gain, which allows for higher current flow without increasing the overall package size. The pre-biasing also enables the device to operate in a lower voltage range, which helps to reduce electromagnetic interference (EMI).
The DDC123JU-7-F is ideal for a range of applications that require precision current control, high levels of current gain, and low-noise, low-power operation. It is suitable for use in a variety of signal processing and power switching applications, and it can also be used in audio mixing and filtering applications. The device also has a built-in pre-biased resistor, which helps to ensure that the device maintains its current gain and remains reliable even under extreme operating conditions.
The specific data is subject to PDF, and the above content is for reference
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