Allicdata Part #: | DDTA113TCA-FDITR-ND |
Manufacturer Part#: |
DDTA113TCA-7-F |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTA113TCA-7-F Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.02550 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DDTA113 |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Series: | -- |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTA113TCA-7-F transistor is a single, pre-biased, bipolar junction transistor (BJT) device that operates in the discrete, three-terminal configuration of a typical BJT. This device is particularly well suited for applications that require accuracy and repeatability, such as voltage level shifting, current-limiting duties, switching, and acting as an analog amplifier or linear driver. By taking advantage of its pre-biased construction, the DDTA113TCA-7-F saves design time and effort while providing accuracy and repeatability, which contribute to its efficiency and reliability.The DDTA113TCA-7-F is composed of two NPN transistors constructed using planar processing. The source of each transistor is connected along with common collector-base junction to a common source. The collector region of each device is connected to a common collector-base junction, allowing for two complete advantage “H” circuits. This design allows for better performance, improved stability, and more efficient operation than traditional bipolar junction transistors.When operating, the DDTA113TCA-7-F uses the common collector-base junction to bias the two transistors. This allows for linear amplification in both directions (positive and negative). In operation, the collector region of one transistor receives the output signal, while the other transistor\'s base region receives the input signal. As the collectors of both transistors become self-biased to the same potential, linear amplification analog to voltage gain is delivered by controlling the base current that is fed to the base of both transistors.The DDTA113TCA-7-F is also capable of providing current to drive high-speed logic circuits. As the base current of the transistor is controlled, the base-emitter voltage can be adjusted in order to set the desired collector-emitter voltage. This ability allow the device to be used as a high speed switching device for logic circuits and for amplifying low signal levels.The DDTA113TCA-7-F is capable of operation in any environment at temperatures ranging from -55°C to +125°C. This range of operating temperature supports various types of applications, even those in extreme temperatures, making it ideal for industrial and automotive applications.In conclusion, the DDTA113TCA-7-F single, pre-biased bipolar junction transistor is designed for accuracy and repeatability with high efficiency, reliability, and wide temperature support, making it ideal for many applications. Its design allows for linear amplification in both directions and its pre-biased construction saves design time and effort, while providing accurate performance and repeatability. Finally, the device is also capable of providing current to drive high-speed logic circuits, making it a valuable addition to any application.
The specific data is subject to PDF, and the above content is for reference
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