DDTA143TUA-7

DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Base Part Number:	DDTA143
Supplier Device Package:	SOT-323
Package / Case:	SC-70, SOT-323
Mounting Type:	Surface Mount
Power - Max:	200mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 2.5mA
Series:	--
Resistor - Base (R1):	4.7 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Discontinued at Digi-Key
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

The DDTA143TUA-7 is a single, pre-biased bipolar (BJT) transistor. It is manufactured by Diodes Incorporated and is designed for general purpose switching applications. This transistor is an excellent choice for applications requiring load control and interface protection. The device exhibits good thermal stability and low power dissipation making it suitable for a wide range of applications.

Features

The DDTA143TUA-7 has several features designed to provide improved reliability and performance in switching applications. These include a wide range of operating collector-emitter voltage and base current values, low saturation voltage, and high breakdown voltage. The device also offers an improved high frequency transition, resulting in a wide range of frequencies and applications. In addition, the device is designed with an integrated series Rds(on) which reduces switching losses, improves noise immunity, and provides improved thermal characteristics.

Application Fields

Due to its wide range of operating parameters and low power consumption, the DDTA143TUA-7 can be used in a variety of electronic applications. It is especially suited for applications requiring load control and interface protection such as automotive and consumer electronics. It is also suitable for applications involving power switching and protection such as automotive power supplies. The DDTA143TUA-7 is also well-suited for data communication and signal processing applications, as its wide range of frequency responses and high breakdown voltage enable fast data transmission.

Working Principle

The DDTA143TUA-7 is a voltage-controlled device. When the base-emitter voltage of the device is increased, the collector current increases and the current gain of the transistor is lowered. Conversely, when the base-emitter voltage is decreased, the collector current decreases and the current gain of the transistor is increased. This change in collector current is dependent on the applied base current, however the device is designed to operate over a wide range of base currents and the resulting collector current can be tailored to the application.The DDTA143TUA-7 is also designed to operate over a wide range of collector-emitter voltages, allowing it to be used for a variety of applications. When a positive bias is applied to the collector-emitter junction, the transistor enters “active” mode and the collector current is determined by the base current. In this “active” mode, the device can be used to control the current of an external component. When a negative bias is applied to the collector-emitter junction, the transistor enters “cut-off” mode and the collector current is close to zero. In this “cut-off” mode, the device can be used to prevent current from flowing to an external component.

Conclusion

The DDTA143TUA-7 single, pre-biased bipolar (BJT) transistor is an ideal choice for applications requiring load control and interface protection. It offers a wide range of operating parameters, low power consumption, and is capable of operating over a wide range of collector-emitter voltages which makes it suitable for a number of applications. The DDTA143TUA-7 is an excellent choice for applications requiring switching, power control, and signal processing.

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