DDTA143ECA-7 Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 10mA, 5V
Base Part Number:	DDTA143
Supplier Device Package:	SOT-23-3
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	200mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	4.7 kOhms
Resistor - Base (R1):	4.7 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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The DDTA143ECA-7 is a pre-biased single bipolar junction transistor (BJT) from NXP Semiconductors. It is fabricated using NXP\'s on-board process, with a 4-lead PNP package, and an integrated circuit for enhanced performance. This device is suitable for many applications, including amplifier design, power supply design and low-noise telephone.The DDTA143ECA-7 is a single NPN, Si-planar, pre-biased PNP bipolar junction transistor designed for amplifier, power supply and telephone applications. It utilizes NXP\'s on-board process to provide excellent electrical characteristics, and low parasitic capacitance to achieve high-performance operation. This process also provides a low thermal impedance package to maximize device performance. The device consists of two transistor elements and two associated bias networks, which are optimized for use and performance in a wide variety of applications.The two active transistor elements together form a single NPN transistor. As a bipolar device, the DDTA143ECA-7 operates in the NPN region when it is forward biased. The base-emitter junction is forward biased and the base-collector junction is reverse biased, causing current to flow from the emitter to the collector. When current flows through the base-collector junction, most of it will remain in the collector, creating the current gain of a PNP transistor. The combination of the two transistor elements provides a higher unity current gain (common-emitter) than either device alone.The DDTA143ECA-7 also features two associated bias networks that provide additional performance capabilities. The first is an integrated base-bias network, which provides an adjustable base current to the two active transistor elements, enabling higher performance and full control of device characteristics. The second is an integrated collector-bias network, which provides the ability to bias the collector-emitter junction to a specified voltage, further improving device performance.The DDTA143ECA-7 is a high-performance pre-biased PNP bipolar junction transistor suitable for amplifier, power supply and telephone applications. Its on-board production process, low parasitic capacitance and low thermal impedance provide excellent electrical characteristics. The integrated base and collector bias networks also allow for precise control of device characteristics. The combination of all these features makes the DDTA143ECA-7 an ideal choice for designers looking for an excellent pre-biased transistor.

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