Allicdata Part #: | DDTA115EKA-7-F-ND |
Manufacturer Part#: |
DDTA115EKA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SC59-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTA115EKA-7-F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 5mA, 5V |
Base Part Number: | DDTA115 |
Supplier Device Package: | SC-59-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 100 kOhms |
Resistor - Base (R1): | 100 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The DDTA115EKA-7-F is a single, pre-biased bipolar junction transistor (BJT) that is commonly used in low-noise amplifier applications. This device has many advantages over other similar types of transistors, such as its ability to have very low noise levels and high gain. It is also known for its low temperature coefficient and excellent stability.
The DDTA115EKA-7-F is a two-terminal device that consists of two P-type layers separated by an N-type layer. The transistor has two different current handling terminal connectors, one for the base and one for the collector. The collector connector is designed to be able to accept a higher current than the base.
The DDTA115EKA-7-F is typically used as a pre-biased BJT in amplifier applications. The pre-biased feature allows for a slight current to be applied to the base connection before full signal input is applied, thereby allowing the BJT to achieve a higher gain under signal levels. This transistor is also used in applications where noise is an issue, as the pre-biased BJT can provide a better signal to noise ratio than other types of BJTs.
As with any type of transistor, the DDTA115EKA-7-F must operate within a fixed range of temperature and power levels. The transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector current rating of 2.5 mA and can handle up to a maximum of 30 mA at 20 kHz.
The DDTA115EKA-7-F works on the principle of current amplification and voltage regulation. The transistor has three main layers, including an emitter, a base, and a collector. The base and collector are connected to two different power sources, with the current going through the base determining the amount of current flowing through the collector. This amount is then regulated by the voltage drop across the base-emitter junction.
The DDTA115EKA-7-F is also a popular choice for switching applications, as it is able to handle higher current levels than other types of BJTs. It is also used in industrial control and medical systems, as it is able to handle higher voltages without any problems.
The DDTA115EKA-7-F is a highly reliable device that is capable of providing reliable performance over a long lifetime. It is also an efficient device, as it has a low power consumption and a low noise level. Overall, the DDTA115EKA-7-F is an excellent choice for low-noise amplifier and switching applications.
The specific data is subject to PDF, and the above content is for reference
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