DDTA114TCA-7 Discrete Semiconductor Products |
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Allicdata Part #: | DDTA114TCADITR-ND |
Manufacturer Part#: |
DDTA114TCA-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTA114TCA-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100µA, 1mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | DDTA114 |
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The DDTA114TCA-7 is a single, pre-biased, bipolar junction transistor (BJT). It is designed to switch and amplify signals and power levels in a variety of applications, from low to medium voltage level inputs. It can be used to shape and control signals, manage power transfers, and reduce noise in various circuits. In this article, we will discuss the application fields and working principles of the DDTA114TCA-7 in more detail.
The DDTA114TCA-7 is a silicon NPN-type transistor with a maximum power input of 1.5W and a maximum collector-emitter voltage of 50 V. It also has a breakdown voltage of 40 V, a maximum collector-base voltage of 20 V, and a collector current of 50 mA. As such, the large saturation current, fast switching speed, and high power dissipation make the DDTA114TCA-7 suitable for low-to-medium voltage application fields.
The DDTA114TCA-7 can be used in many applications, including motor control, audio circuits, and voice recognition systems. It is also used in power converters, power amplifiers and linear drivers. Additionally, this transistor is used in high-voltage LED lighting systems, digital processing and networking applications.
The DDTA114TCA-7 transistor is built using the NPN layer of material and is biased in its active state, which means that it does not require an additional power source for operation. Rather, the current from the base terminal travels to the collector, which creates a voltage drop across the transistor and switches the output from one state to another. The transistor\'s active state is characterized by a decrease in voltage at the collector terminal when the base terminal is subjected to an increase in current.
The DDTA114TCA-7 can also be used to switch and amplify signals and power levels by connecting its base and emitter terminals to a DC voltage source, such as an integrated circuit, and passing an AC signal to be amplified through its collector terminal. Due to its high saturation current, this transistor can withstand large current spikes and is able to amplify signals with high accuracy. This is beneficial in audio applications, where it can be used to reduce noise in amplified sounds.
The DDTA114TCA-7 is a versatile bipolar junction transistor that has a wide range of applications. With its high power dissipation, high collector voltage, and large saturation current, it is suitable for low-medium voltage level inputs, motor control, audio circuits, voice recognition systems, power converters, and power amplifiers. It is also used to switch and amplify signals and power levels, reduce noise in amplified sounds, and control voltage and current in various circuits. These features make the DDTA114TCA-7 a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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