DDTA113TE-7-F

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DDTA113TE-7-F Application Field and Working Principle

The DDTA113TE-7-F is a type of pre-biased, single bipolar junction transistor (BJT). It is designed for use as a small-signal switch and is suitable for a range of applications, including amplifier circuits and audio signal processing. The transistor has a low on resistance and can handle switching frequencies up to 1 MHz.

Structure and Physical Characteristics

The DDTA113TE-7-F is a three-terminal transistor that is built on a base of silicon and has a multi-layer film insulation layer to protect its components. Its leads are gold-plated and its package is a SOT23-6. It features a breakdown voltage of 50V (DC) and a surge current of 2 A. Its collector-emitter voltage is 60 V (DC) and its power dissipation is 400 mW. The transistor has a maximum junction temperature of 150 degrees Celsius and an operating temperature range of -55 to +150 degrees Celsius.

Functional Characteristics

The DDTA113TE-7-F has a DC current gain hFE of 40 and a current transfer ratio CTR of 40 at a collector current of 0.2 A. Its on-resistance is 10 Ohms and its switching time is 6 nS. The device has a minimum input capacitance of 7 pF and a maximum output capacitance of 2.5 nF. Its total capacitance CT is 12 nF. The transistor has a high breakdown voltage and high switching speed, making it suitable for high-frequency applications.

Working Principle

The DDTA113TE-7-F is a long-tailed pair transistor. It utilises the collector-emitter-base circuit to create a current-gain element. When the current is passed through the base-emitter junction, the base is energised and an avalanche current is created in the collector-base junction. This current is further amplified in the base-collector junction and passed out through the collector, thus creating a current gain.

Conclusion

The DDTA113TE-7-F is a single, pre-biased bipolar junction transistor that is ideal for use in amplifier, switching and audio processing circuits. Through its utilisation of avalanche current, it has a high current gain and is compatible with high-frequency applications. Its low switching time and fast current transfer ratio also make it an efficient device for signal switching.

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