DDTA113TE-7 Allicdata Electronics
Allicdata Part #:

DDTA113TEDITR-ND

Manufacturer Part#:

DDTA113TE-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA113TE-7 datasheetDDTA113TE-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.05530
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: DDTA113
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Series: --
Resistor - Base (R1): 1 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Bipolar Junction Transistors (BJTs) are active semiconductor devices that have three terminals and are used in electronic applications such as amplifiers, switches, power supplies and oscillators. The single, pre-biased DDTA113TE-7 is a specific type of BJT that is particularly useful for applications such as small-signal amplifying and analog switching.

The DDTA113TE-7 is a pre-biased transistor that has a collector-base voltage in the tens of volts and can handle a maximum collector current of 30 mA. Its features include low noise and high input impedance, making it a great choice for low-power amplifying applications. Its typical power gain is in the range of 10-20 dB, and its maximum power dissipation is 25 mW.

The DDTA113TE-7\'s working principle is based on the internal field effect. When the base voltage is set equal to the emitter voltage, the electric field inside the transistor is equal, resulting in high electrical current flow in the collector-base region due to the collector current saturation. This leads to amplification of signals, which makes the DDTA113TE-7 highly suitable for low-power amplification applications.

The DDTA113TE-7 can be used in a variety of applications. It is commonly used in amplifier circuits due to its low-noise properties, as well as in analog switching applications due to its ability to handle high voltages. It is also useful for amplifying small signals, such as in TV tuners, computer video processing, telephone systems, and medical instrumentation. Due to its low power consumption and the fact that it is pre-biased, the DDTA113TE-7 is also a great choice for battery-powered devices.

In conclusion, the DDTA113TE-7 transistor is a pre-biased BJT that is highly suitable for applications such as low-power amplification and analog switching. Its main features include low noise, high input impedance, and a maximum collector current of 30 mA. It is a great choice for battery-powered devices, as well as for amplifying small signals in TV tuners, computer video processing and telephone systems.

The specific data is subject to PDF, and the above content is for reference

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