DDTA115GKA-7-F Allicdata Electronics
Allicdata Part #:

DDTA115GKA-7-F-ND

Manufacturer Part#:

DDTA115GKA-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SC59-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA115GKA-7-F datasheetDDTA115GKA-7-F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Emitter Base (R2): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3
Base Part Number: DDTA115
Description

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The DDTA115GKA-7-F is a pre-biased single bipolar junction transistor (BJT) available from Diodes Incorporated. It is a surface mount device that is designed for small-signal, digital and analog applications. The device has a max collector current of 10mA and max voltage ratings of 50V and 800V. The DDTA115GKA-7-F is a small-signal transistor that is ideal for use in switching and amplifier circuits.

A transistor is an active device with three terminals that can be used to control current. The three terminals on a transistor are called the base, collector and emitter. The BJT consists of three layers of semiconductor material which form a closed loop junction between the base and collector. When a voltage is applied between the base and collector terminals, current flows between the emitter and collector. This current flow is due to the movement of electrons and holes within the transistor. The transistor can be operated in either an enhancement mode or a depletion mode.

The DDTA115GKA-7-F is a pre-biased transistor. Pre-biased transistors are manufactured with built-in bias networks. This allows the collector current to be controlled directly without the need for an external resistor or capacitor. The device is capable of providing high gain and low power consumption when operated in the linear region. The high-speed switching capability of the DDTA115GKA-7-F makes it suitable for use in high frequency applications such as switching regulators and amplifiers. The maximum collector current rating of 10mA ensures that it is not suitable for use in high-power applications.

The DDTA115GKA-7-F is used in a variety of applications. The device is often used in switching and amplifying circuits. It can also be used in digital circuitry as it is capable of providing high speed switching. The device can also be used in analog circuits for precision voltage control and current sensing. The device is often used in automotive applications such as voltage regulators, fuel injectors and engine control systems. The pre-biased design of the device allows it to be used without the need for external components.

The DDTA115GKA-7-F is a single bipolar junction transistor pre-biased for small-signal, digital and analog applications. It has a max collector current of 10mA and voltage ratings of 50V and 800V. The pre-biased design of the device makes it ideal for use in switching and amplifying circuits. The high-speed switching capabilities of the device make it suitable for use in high frequency applications such as switching regulators and amplifiers. The device is also suitable for use in automotive applications such as voltage regulators, fuel injectors and engine control systems. The DDTA115GKA-7-F is a reliable and versatile pre-biased transistor.

The specific data is subject to PDF, and the above content is for reference

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