Allicdata Part #: | DDTA115GUA-FDITR-ND |
Manufacturer Part#: |
DDTA115GUA-7-F |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTA115GUA-7-F Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03156 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Base Part Number: | DDTA115 |
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The DDTA115GUA-7-F is a type of bipolar single pre-biased transistor, using various components to help it perform its functions. This type of transistor is made up of three parts: the collector, base, and emitter. The collector, base, and emitter are used to form the collector-base junction, emitter-base junction, and collector-emitter junction, respectively. A metal-oxide-semiconductor field-effect transistor (MOSFET) is used as the gate in this type of transistor, with a receiver connected to the gate to detect signals. The biasing of this transistor is set in advance, with the emitter at ground potential, and the base and collector at pre-fixed voltages. The two interconnected transistors form a system which amplifies incoming signals.
The DDTA115GUA-7-F transistor is mainly used in applications that require small amounts of power and low noise levels. It is widely used in electronic circuit designs such as low noise amplifiers and radio frequency amplifiers. These transistors are also used in instrumentation systems such as strain gauges and resistive pressure transducers. Additionally, these transistors are often found in digital circuits such as logic gates and memory components.
The working principle of the DDTA115GUA-7-F transistor can be explained with the help of its structure. The base current controls the collector current, as it causes a depletion of charge carriers across the collector-base junction. When the base-emitter junction is forward biased, this increases the current flow and brings the transistor out of saturation. The base current also controls the variation of collector-emitter potential and, thus, the collector current. When a signal is given to the gate, its voltage determines the amount of current flowing into the base, which in turn regulates the collector current.
The DDTA115GUA-7-F transistor is widely used in small-signal analog and digital circuits. Its wide range of operating temperature, low power consumption and excellent linearity offer an efficient and economic solution for many applications. Due to its excellent frequency characteristics, the transistor is also widely used in radio-frequency fields. Its ability to amplify and attenuate radio signals makes it an ideal component for radio receivers and amplifiers.
In conclusion, the DDTA115GUA-7-F is a pre-biased bipolar transistor, using various components to help it perform its functions. It is frequently used in radio frequency amplifiers and circuit designs that require low noise levels. Its structure and working principle make it ideal for use in areas such as instrumentation, digital circuits, and radio frequency components.
The specific data is subject to PDF, and the above content is for reference
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