DDTA123YUA-7 Allicdata Electronics
Allicdata Part #:

DDTA123YUADITR-ND

Manufacturer Part#:

DDTA123YUA-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA123YUA-7 datasheetDDTA123YUA-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.04823
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Resistor - Emitter Base (R2): 10 kOhms
Base Part Number: DDTA123
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Series: --
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTA123YUA-7 is a single pre-biased bipolar junction transistor (BJT) intended for use in a variety of electronic applications. The DDTA123YUA-7 features high performance, low power consumption, and improved thermal characteristics compared to other devices in its class.

A bipolar junction transistor is a type of semiconductor device in which electrons flow between two semiconductor layers controlled by varying the electric current applied to the structure. These layers, called the emitter, collector and base, form a three-terminal device that works on the same principles as transistors constructed with other materials such as silicon.

The DDTA123YUA-7 is a pre-biased device which means it contains strain relief and is already in an active operating state. This makes it a good choice for applications where media temperature must be closely maintained such as temperature regulation and display control.

The DDTA123YUA-7 is ofthe NPN type, meaning it has an N-type semiconductor material in the collector region, a P-type material in the base region, and an N-type material in the emitter region. The base-emitter junction is forward biased, meaning that electrons flow from the emitter to the base and the base-collector junction is reverse biased, meaning that electrons flow from the collector to the base.

The working principle of the DDTA123YUA-7 is based on a forward-biased base-emitter junction allowing current to flow from the emitter to the base, and a reverse-biased base-collector junction allowing electrons to flow from the collector to the base. This transistor will conduct when a current flow through the base is greater than an established amount that is determined by the device\'s chip and design.

The DDTA123YUA-7 has a number of key features that make it suitable for use in a variety of applications. These include low power consumption, improved thermal characteristics, and low noise operation. Additionally, the transistor is capable of driving high frequency signals and controlling peripherals with high precision.

In conclusion, the DDTA123YUA-7 is a pre-biased single bipolar junction transistor intended for use in a wide range of electronic applications. It is a NPN type device which has a range of benefits over other devices in its class. The DDTA123YUA-7 is capable of driving high frequency signals, has improved thermal characteristics, and is also low power consumption.

The specific data is subject to PDF, and the above content is for reference

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