
Allicdata Part #: | DDTA144WKA-7-F-ND |
Manufacturer Part#: |
DDTA144WKA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SC59-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 10mA, 5V |
Base Part Number: | DDTA144 |
Supplier Device Package: | SC-59-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The DDTA144WKA-7-F is a type of NPN transistor, which falls into the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. It is commonly used in amplifying or switching applications, and its electrical characteristics are specified at 25°C case temperature.
The DDTA144WKA-7-F is an NPN transistor that includes an integrated bias resistor network and a pre-fixed diode for biasing. The bias resistor network creates a voltage divider on the base-emitter junction by utilizing a low-value base resistor and a relatively higher emitter resistor. This bias configuration reduces the amount of voltage required to turn the transistor on, recommending it for low voltage applications, and it also reduces the dissipation caused due to external bias resistors by eliminating the need for them. The integrated pre-fixed diode in the transistor helps to reduce the capacitance of the transistor during switching and it also helps to reduce the noise generated by the amplifier.
The DDTA144WKA-7-F features a very low saturation voltage and can handle large collector currents up to 300mA. It also has a very high gain rate, making it an ideal choice for audio amplification applications. The collector-emitter and base-emitter saturation voltages are typically 2V and 0.5V, respectively. It has an operating temperature range between -55°C and 150°C. The minimum gain of the device is typically 11 and the hFE or DC current gain is typically 200 max, at a collector current of 5mA and a collector-emitter voltage of 80V. Additional features include a PNP complementary type and a collector-base insulation voltage rating of 5000V.
The working principle of the DDTA144WKA-7-F is based on the basic principles of bipolar junction transistors (BJT). This type of transistor is primarily used in amplifying and switching applications. The transistor works by utilizing an electric current applied to the base, to control the movement of electrons in the collector-emitter junction. The integrated bias resistor network helps to reduce the base-emitter voltage needed to turn the transistor on. This is achieved by creating a voltage divider on the base-emitter junction with two resistors. The integrated pre-fixed diode helps to reduce the capacitance of the transistor during switching and also reduces the noise generated by the amplifier.
The DDTA144WKA-7-F is a reliable and stable transistor commonly used in various electronic applications. It has various useful features such as low saturation voltage, large collector current and high gain. This makes it suitable for amplifying, switching, and audio amplification applications. Its integrated bias network and pre-fixed diode make it easier to use and reduce the amount of voltage required to turn the transistor on. It is also reliable and has a wide operating temperature range, making it suitable for use in a variety of environments.
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