Allicdata Part #: | DF2S12FUH3FTR-ND |
Manufacturer Part#: |
DF2S12FU,H3F |
Price: | $ 0.02 |
Product Category: | Circuit Protection |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TVS DIODE 9V USC |
More Detail: | N/A |
DataSheet: | DF2S12FU,H3F Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.02024 |
6000 +: | $ 0.01826 |
15000 +: | $ 0.01588 |
30000 +: | $ 0.01429 |
75000 +: | $ 0.01270 |
150000 +: | $ 0.01058 |
Specifications
Voltage - Clamping (Max) @ Ipp: | -- |
Supplier Device Package: | USC |
Package / Case: | SC-76, SOD-323 |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Capacitance @ Frequency: | 15pF @ 1MHz |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | -- |
Current - Peak Pulse (10/1000µs): | -- |
Series: | -- |
Voltage - Breakdown (Min): | 11.4V |
Voltage - Reverse Standoff (Typ): | 9V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Description
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DF2S12FU,H3F belongs to the transient voltage suppressor (TVS) diode family and is particularly suitable for use in various application fields. TVS diodes are used in a vast range of applications for protection from transient voltage surges, which are pulsed electrical voltage spikes that occur in power supplies, data lines, and communications systems because of lightning strikes and power outages. The DF2S12FU,H3F is used in both consumer electronics and industrial equipment, such as automotive systems and power supplies.The DF2S12FU,H3F consists of a dual Schottky diode. It is available in a compact DPAK package, which allows it to be used in small designs where space is at a premium. The diode has a very low dynamic resistance (eval 0.73 Ω), which leads to minimal power dissipation and quick turn-on time (3ns max), making it suitable for high-speed applications. It also has a reverse recovery time (trr) of 1ns and a reverse stand-off voltage of 12V. Furthermore, the DF2S12FU,H3F has excellent ESD protection, with a transient peak pulse current capability of up to 25A.The DF2S12FU,H3F works by serving as a clamping device. It responds quickly to transient spikes, limiting the voltage to the device. It acts like a transistor, whereby the current flows from the source to the drain when the voltage exceeds the breakdown voltage of the device. This process is known as avalanche breakdown and helps to protect sensitive components from the transient spike in voltage.The DF2S12FU,H3F is also optimized for high-side ESD protection and line-to-ground protection. It is particularly effective in automotive systems, where it can protect the electronic control units (ECUs) from damage due to overvoltage. The excellent ESD protection is achieved by integrating low-resistance diodes in the clamping channels. In addition, the DF2S12FU,H3F is designed for radio frequency interference (RFI) applications. Its low dynamic resistance and high capacitance enable it to protect RF systems from overvoltage and noise interference.The DF2S12FU,H3F is an extremely versatile device, which can be used in a variety of applications for transient voltage protection. It offers excellent ESD protection and is suitable for use in automotive systems and other high-speed applications. Moreover, its excellent RF noise handling capabilities make it suitable for use in RF systems.
The specific data is subject to PDF, and the above content is for reference
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