DF2S5M4SL,L3F

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DF2S5M4SL,L3F is a type of Thyristor Surge Protector (TSP). A TSP is a type of TVS – Diode specifically designed to protect sensitive electronic components from catastrophic electrical overstress (EOS). It is designed to protect electronic components and circuits from ESD, EMI, electrical overstress (EOS), and lightning-induced transients. A TVS – Diode is a special type of diode specifically designed to protect against EOS and over-voltage transients.

In some situations, it’s not sufficient for EOS protection alone. EMI and ESD protection must also be taken into account. To address this, the DF2S5M4SL,L3F has been designed with built-in EMI/ESD protection. The diode is optimized for specific applications such as portable equipment, consumer electronics, communication equipment, and automotive applications.

The DF2S5M4SL,L3F is designed to maintain a maximum peak-pulse voltage of 5V and a minimum breakdown voltage of 12V when exposed to EOS voltages of up to 200V. It also has a low dynamic resistance of 200mΩs. This protects sensitive components from highly transient voltage signals that could potentially cause damage.

The working principle of the DF2S5M4SL,L3F is based on the avalanche breakdown effect. An avalanche breakdown occurs when a high enough voltage is applied to a semiconductor material. This causes a sudden increase in current flow which could potentially damage the semiconductor material. The DF2s5m4sl,l3F is designed to absorb this surge of excessive current, ensuring protection for the connected device.

The DF2s5m4sl,L3F is optimized for applications that require high-performance EOS protection, EMI/ESD protection, and low dynamic resistance. It is designed to provide maximum protection for sensitive electronics and circuits in a wide variety of applications.

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