DF2S6.8MFS,L3M Allicdata Electronics
Allicdata Part #:

DF2S6.8MFSL3MTR-ND

Manufacturer Part#:

DF2S6.8MFS,L3M

Price: $ 0.04
Product Category:

Circuit Protection

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TVS DIODE 5V 15V SOD923
More Detail: N/A
DataSheet: DF2S6.8MFS,L3M datasheetDF2S6.8MFS,L3M Datasheet/PDF
Quantity: 20000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
10000 +: $ 0.03149
30000 +: $ 0.02964
50000 +: $ 0.02778
100000 +: $ 0.02470
Stock 20000Can Ship Immediately
$ 0.04
Specifications
Voltage - Clamping (Max) @ Ipp: 15V
Supplier Device Package: SOD-923
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.45pF @ 1MHz
Power Line Protection: No
Power - Peak Pulse: 45W
Current - Peak Pulse (10/1000µs): 3A
Series: --
Voltage - Breakdown (Min): 6V
Voltage - Reverse Standoff (Typ): 5V (Max)
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS diodes are widely used in a wide range of industries, as they offer protection from transient voltage spikes, and suppress interference from high-voltage transients and ESD. The DF2S6.8MFS,L3M is a high-power, low-leakage, unidirectional silicon avalanche photodiode suitable for a wide variety of automotive applications. It offers superior design flexibility and high reliability, making it an excellent choice for protecting sensitive electronic components from harsh environmental conditions.

The DF2S6.8MFS,L3M features a low turn on voltage of 5V, maximum reverse voltage of 6.8V and junction capacitance of 7.5 pF. It also has a highly compact design, with a die size of 1000 microns by 1600 microns (50.8mm2). Additionally, the DF2S6.8MFS,L3M has a low leakage current of 5 nA, making it an excellent choice for devices that require low power consumption.

The DF2S6.8MFS,L3M typically operates in two main modes, namely forward-blocking mode and reverse-blocking mode. In the forward-blocking mode, the diode blocks all current in the forward direction, thus effectively protecting the circuit from damage due to large voltage spikes or transients. In the reverse-blocking mode, the diode can limit the reverse current to a preset value, providing protection against reverse bias breakdowns. The DF2S6.8MFS,L3M also features electrostatic discharge (ESD) protection, which limits the current flow when an ESD event is detected.

The DF2S6.8MFS,L3M is typically used in automotive applications, where reliability and durability are of the utmost importance. It provides an ideal solution for sensing and control systems, providing superior protection against transients and ESD. Furthermore, its low leakage current and compact size make it ideal for battery operated applications, such as portable hand-held devices.

In summary, the DF2S6.8MFS,L3M is a highly reliable and durable TVS diode suitable for a wide range of automotive and consumer applications. It offers superior protection from large voltage spikes, transients, and ESD, and a highly compact design. Additionally, its low leakage current makes it well suited to battery operated applications.

The specific data is subject to PDF, and the above content is for reference

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