DG418AK/883B

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DG418AK/883B is a 16-pin dual analog switch IC featuring a wide range in both single-ended and differential formats. It is designed for DIP and SOL packages, as well as for surface mount applications. The on-state resistance of the switches is specified separately for each pin, and can be changed from just a few ohms to thousands of ohms. The off-state leakage current is also specified for each pin, and can range from just a few picoamps to almost a milliamp.

The DG418AK/883B is ideal for applications such as multiplexer/demultiplexer, analog switch matrix, or digital switch-matrix based systems. It can be used in digital signal processing circuits, fiber optics, data communications, video and audio signals, optoelectronic, and other analog applications. The switches also have a low-voltage rail-to-rail capability, allowing them to be used in circuits operating with a supply voltage as low as 0.9VDD.

The DG418AK/883B is a dual single-pole double-throw (SPDT) switch. It can be used to switch between two different inputs and outputs, or provide a direct connection between them. It features a wide range of on-state resistance (RDS(ON)) ratings of up to 10,000 ohms and a low-voltage rail-to-rail capability. It also features off-state leakage current (IDDS) ratings of up to 0.8mA. The switches can be used in a variety of applications:

• Analog and digital signal processing circuits
• Data communications
• Video and audio signal switching
• Fiber optics
• Optoelectronic devices

The DG418AK/883B features low "on" resistance (RDS(ON)) and low off-state leakage (IDDS). This combination makes it ideal for a variety of analog and digital signal processing applications. It is well suited for use in multiplexer/demultiplexer, analog switch matrix, and digital switch-matrix based systems. The high immunity to ESD makes the switch suitable for use in systems with high electromagnetic interference (EMI) levels.

The working principle of the DG418AK/883B is based on the FET switch technology. This technology uses a MOSFET transistor to switch between two signals. The Transconductance (GT) of the device is proportional to the voltage applied to its gate terminal. When GT is high, the on-state resistance (RDS(ON)) is low, and when GT is low, the on-state resistance is high. By controlling the voltage applied to the gate terminal, the on-state resistance can be adjusted to meet the requirements of the application.

The FET switch technology also reduces the off-state leakage current (IDDS). The FET switch has an insulated gate that is insensitive to static electricity, which reduces the risk of electrical shorts. The low-voltage capability of the switch makes it ideal for applications that use batteries. The low off-state leakage (IDDS) of the switch reduces the power consumption of the system, making it more efficient.

In conclusion, the DG418AK/883B is a dual-channel single-pole double-throw switch that is well-suited for analog and digital signal processing applications. It features a wide range of on-state resistance ratings, low-voltage rail-to-rail capability, and low off-state leakage current. The combination of these features makes the switch an ideal choice for multiplexer/demultiplexer, analog switch matrix, and digital switch-matrix based systems.

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