DG442ETE+T

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The DG442ETE+T is a high-performance analog switch specifically designed for use in demanding application fields. The device is uniquely suited for multiplexing/demultiplexing applications due to its low ON resistance of 1Ω and low OFF leakage current of 1nA. It is ideal for use in high-impedance and low-voltage signal paths and is fully compatible with a wide range of voltage requirements.

The device is composed of an array of four independently-controlled channels, each capable of routing analog signals with a single digital control line. By varying the logic of this control line, the DG442ETE+T can be used to connect or disconnect one of four single-ended channels: Vconn1, Vconn2, Vconn3, and Vconn4. This device can also be used to drive capacitive loads up to 1000pF.

The working principle of the DG442ETE+T is based on the use of two MOSFETs per channel. The first MOSFET acts as the switch, providing a low ON resistance, while the second MOSFET serves as an active discharge device, pulling the OFF resistance of the switch down for more efficient operation. By varying the logic of the control line, these MOSFETs can be used to control each of the four channels independently.

The device is designed to be used in a wide range of application fields, including systems with limited input voltage ranges. Additionally, it is highly versatile and can be used for both digital and analog signals. It features a total of four independently-controlled channels and can handle inputs up to around 10V.

Overall, the DG442ETE+T is an excellent choice for high-performance analog switches, multiplexers, demultiplexers, and capacitive loads. It has a low ON resistance of 1Ω, low OFF leakage current of 1nA, and can drive capacitive loads up to 1000pF. It is also highly versatile and can be used for both digital and analog signals. With its unique combination of features, the DG442ETE+T is perfectly suited for use in demanding application fields.

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