DL5226B-TP Allicdata Electronics

DL5226B-TP Discrete Semiconductor Products

Allicdata Part #:

DL5226B-TPMSTR-ND

Manufacturer Part#:

DL5226B-TP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 3.3V 500MW MINIMELF
More Detail: Zener Diode 3.3V 500mW ±5% Surface Mount Mini MELF
DataSheet: DL5226B-TP datasheetDL5226B-TP Datasheet/PDF
Quantity: 1000
2500 +: $ 0.03804
5000 +: $ 0.03308
12500 +: $ 0.02811
25000 +: $ 0.02646
62500 +: $ 0.02481
125000 +: $ 0.02205
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 28 Ohms
Current - Reverse Leakage @ Vr: 25µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Base Part Number: DL5226
Description

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The DL5226B-TP is a single zener diode designed with a zener voltage range of 5.1V-83V, with a power dissipation rate of 1W (max), a reverse current maximum of 1uA, and a working temperature range of -55°C to +150°C. This diode utilizes diffused Zener technology and is specially designed to provide superior performance in high-temperature applications.

The DL5226B-TP is most commonly used in applications such as power management in automotive and industrial electronics, TV receivers, advanced audio systems, battery systems, and other applications requiring voltage regulation. It is specifically designed to protect against reverse voltages in a design by clamps the voltage to a safe level. The diode also provides an effective voltage reference in combination with resistors or transistor circuits.

The DL5226B-TP can be used in a variety of circuit configurations due to its reverse resistance and low series inductance. Its high temperature specification also makes it suitable for temperature sensing in a variety of temperature-sensitive applications. In addition, when used in combination with a resistor, the DL5226B-TP can be used to create clamp circuits capable of protecting circuits from surges or transients.

The DL5226B-TP is designed to withstand high reverse voltages without needing a spike resistor and the ability to guarantee a nominally stable Zener voltage with a wide temperature range. It is also designed to have a low series inductance, further improving its high-temperature performance. The DL5226B-TP has a high insulation resistance, good soldering capability, low reverse voltage leakage current and excellent thermal stability.

The operating principle of the DL5226B-TP is based on the reverse breakdown of a Zener diode when exposed to a voltage higher than the Zener voltage. When a voltage above the Zener voltage is applied to the diode, the current in the diode increases exponentially due to the "avalanche effect." This effect creates a rapid increase in junction temperature, which causes a further decrease in resistance. The diode will then start to conduct a large amount of current.

The DL5226B-TP is designed to maintain a maximum leakage current at high temperature conditions by utilizing special Zener junction design and temperature compensation resistors. This prevents accidental Zener breakdown of the diode under high temperature conditions and provides reliable Zener action. The current-limiting ability of the DL5226B-TP helps it become the ideal choice for use in majority of power management applications, most commonly used in applications such as power management in automotive and industrial electronics, TV receivers, advanced audio systems, battery systems, and other applications requiring voltage regulation.

The specific data is subject to PDF, and the above content is for reference

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