DL5235B-TP Allicdata Electronics
Allicdata Part #:

DL5235B-TPMSTR-ND

Manufacturer Part#:

DL5235B-TP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 6.8V 500MW MINIMELF
More Detail: Zener Diode 6.8V 500mW ±5% Surface Mount Mini MELF
DataSheet: DL5235B-TP datasheetDL5235B-TP Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Voltage - Zener (Nom) (Vz): 6.8V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 5 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 5V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Base Part Number: DL5235
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes - Zener - Single are one of the most versatile electronic components present in the modern age. The device is capable of allowing a significant amount of current to pass through, resulting in a high voltage being generated which can be used for a variety of applications. An item that has gained immense popularity within the Diodes - Zener - Single range is the DL5235B-TP.

This P-series silicon epitaxial power Zener diode has the ability to conduct current in both a reverse and forward direction, ensuring low noise and high stability. DL5235B-TP is a single diode that has been designed to offer very low leakage current and has a wide operating temperature range of -65°C up to 150°C. It also features an ideal breakdown voltage of around 7.0 V and a maximum power dissipation rating of 500mW.

The device offers very low reverse current, which makes it ideal for small signal circuit applications. It is also very common for DL5235B-TP to be used in voltage regulators, voltage references, switching applications and overvoltage protection. It has been tested and certified to meet the relevant requirements of the RoHS EMS14476, EMI CISPR22 (GROUP A/B) and LVD 93/68/EEC standards.

The working principle behind the DL5235B-TP is relatively simple. When a current is passed through the diode, it generates a voltage. This voltage can then be used for powering electronic circuits or other components. The diode features an internal junction barrier which restricts the current flow and ensures that the voltage generated remains consistent.

The P-series of DL5235B-TPs also feature a built-in clamping mechanism which reduces the current during surges and provides some level of protection against electrical shocks. This built-in clamping also ensures a low on-state voltage which ensures that the circuit power consumption is kept to a minimum. The diode is also designed to be capable of withstanding extreme temperature ranges and currents, making it ideal for use in industrial applications.

In conclusion, the DL5235B-TP from the Diodes - Zener - Single range is one of the most versatile electronic components available. It is capable of allowing a significant amount of current to pass through, resulting in a high voltage being generated. The device is suitable for use in voltage regulator circuits, voltage references, switching applications and overvoltage protection. It is also designed to be highly resistant to electrical shocks and features a built-in clamping mechanism which helps to reduce the current during surges.

The specific data is subject to PDF, and the above content is for reference

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