DL5251B-TP Discrete Semiconductor Products |
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Allicdata Part #: | DL5251B-TPMSTR-ND |
Manufacturer Part#: |
DL5251B-TP |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE ZENER 22V 500MW MINIMELF |
More Detail: | Zener Diode 22V 500mW ±5% Surface Mount Mini MELF |
DataSheet: | DL5251B-TP Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.03804 |
5000 +: | $ 0.03308 |
12500 +: | $ 0.02811 |
25000 +: | $ 0.02646 |
62500 +: | $ 0.02481 |
125000 +: | $ 0.02205 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Voltage - Zener (Nom) (Vz): | 22V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 29 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 17V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | Mini MELF |
Base Part Number: | DL5251 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes - Zener - Single is a type of semiconductor which mainly relies on their junction properties and electrical conduction to operate. An important application of this kind of device is DL5251B-TP. This article will discuss the application field and working principles of this device.
DL5251B-TP is a planar, ultra-thinning Zener diode, designed for applications in small form factor products, such as notebook computers, cellular phones and other portable electronic products that need to meet strict electromagnetic compatibility requirements. Its package size is small and thin and is competitive for price. It uses PN junction as its junction type, with AEC-Q101 compliance and RoHS directive compliant materials.
As a Zener diode, DL5251B-TP has a highly reliable electrical conduction. Its working principle is based on the principle of a PN junction. When a forward bias voltage is applied to the PN junction, the current begins to flow. This current circulation stabilizes the forward bias voltage on the junction and increases the voltage drop between anode and cathode. But when the voltage on the junction is higher than the Zener voltage ( the reverse breakdown voltage ), the reverse bias will begin. When the reverse bias voltage is applied, the current will be reduced and the Zener diode can self-regulate the reverse voltage.
Due to its small package size and strong self-regulation ability, DL5251B-TP can be applied in various fields, such as for power-moving component on circuit, for PC cards and in personal computers, to adjust high frequency circuits, as overvoltage protection component, in direct current power, signal connection, and circuit stabilization and so on. Meanwhile, this type of diode also has pronounced features of high efficiency and high breakdown voltage.
Moreover, the DL5251B-TP makes use of a PN junction which can make current transfer more efficient. As electrons turn into holes and vice versa, minority carriers are formed in the conduction band and a potential barrier appears between the semiconductor material and the potential junction. The potential barrier plays an important role in adjusting the currents in the diode, which result in the precise regulation of the voltage shifts.
In conclusion, DL5251B-TP has a wide range of application fields and its precise voltage regulation is achieved by its working principle based on a PN junction. The current transferring process is improved, resulting in better performance. Besides, its small package size and price also make it preferable for use in notebook computers, cellular phones, and other portable electronics.
The specific data is subject to PDF, and the above content is for reference
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