DL5253B-TP Allicdata Electronics

DL5253B-TP Discrete Semiconductor Products

Allicdata Part #:

DL5253B-TPMSTR-ND

Manufacturer Part#:

DL5253B-TP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 25V 500MW MINIMELF
More Detail: Zener Diode 25V 500mW ±5% Surface Mount Mini MELF
DataSheet: DL5253B-TP datasheetDL5253B-TP Datasheet/PDF
Quantity: 2500
2500 +: $ 0.03804
5000 +: $ 0.03308
12500 +: $ 0.02811
25000 +: $ 0.02646
62500 +: $ 0.02481
125000 +: $ 0.02205
Stock 2500Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Voltage - Zener (Nom) (Vz): 25V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 35 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 19V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Base Part Number: DL5253
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are used in many electronic circuits, from very simple and straightforward applications to more complex and useful ones. Zener diodes and single devices are one example of such a useful device. The DL5253B-TP device is a type of Zener diode that provides an array of useful features. This article will discuss the application field and working principle of the DL5253B-TP device.

The DL5253B-TP is a zener diode designed to provide a low forward bias voltage drop and a consistent breakdown voltage at a given temperature. Its high power rating makes it a perfect choice for use in a wide range of applications, including power supply, high-voltage suppressors, and audio amplifiers. What’s more, the DL5253B-TP can produce reverse leakage current of over 1mA at a temperature of 125°C. This feature makes it exceptionally suitable for applications where a reverse current is required, such as in key locks.

Generally, the DL5253B-TP device’s working principle is based on the principle that a reverse current flow from anode to cathode at a given voltage. When the voltage is lower than the reverse voltage limit of the diode, no current is produced. When the voltage reaches this limit, the diode is said to be in breakdown and the current through the diode increases exponentially with further increase in the reverse bias voltage. At the same time, the voltage across the diode remains constant.

In order to improve its performance, the DL5253B-TP device is constructed with low inductance, ensuring that the forward voltage drop is optimized. This helps to minimize the power dissipation of the diode, which helps to increase the efficiency of the circuit. In addition, the internal capacitance of the diode can be adjusted. The use of an external capacitor provides additional protection against voltage transients, which makes the diode suitable for use in power supply circuits.

To conclude, the DL5253B-TP is a type of single zener diode device designed for use in a variety of electronic circuits. Its low forward drop and its ability to withstand high-current spikes makes it a great choice for use in power supplies and other circuits. Its working principle is based on allowing current to flow to the cathode at a given voltage and the voltage across the diode remains constant. In addition, its low inductance and adjustable internal capacitance ensures improved performance and protection against voltage transients. All these features make the DL5253B-TP device a desirable part for many types of circuit designs.

The specific data is subject to PDF, and the above content is for reference

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