DMC2041UFDB-13

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DMC2041UFDB-13 is a unique transistor Array with a dual N-channel MOSFETs in a single package. It offers superior performance, high reliability, and low overall manufacturing costs, making it an ideal solution for many engineering designs. The dual N-channel MOSFET array is designed to deliver improved high-speed switching performance, extended power dissipation, and reduced on-resistance over a wide range of gate-source voltages. In addition, it is operable with an integrated gate driver, improving the efficiency of the overall system.

Application Field

The DMC2041UFDB-13 is ideal for high frequency switching applications, including power converters, power MOSFETs, and high-speed signal processors. Its superior performance, reliability, and low cost make it ideal for a wide variety of applications such as automotive, industrial, computer, and communications equipment. In addition, the device may be used in several other applications, including high voltage motor drive, electro-acoustic, and amplifiers.

The DMC2041UFDB-13 is also used in the in mobile phone baseband and audio processors for cellular base-stations, where its high switching speed and dynamic response offer significant improvement over traditional FET transistors. Furthermore, its low on-resistance and high power dissipation make it a suitable choice for applications involving high frequency, low voltage control such as HVAC systems, digital cameras, and portable computers.

Working Principle

The DMC2041UFDB-13 consists of two N-channel MOSFETs connected in parallel connected in series, as shown in the figure below.

The dual N-channel MOSFET array works on the basis of the MOSFET’s P-type field effect construction. Upon application of a positive gate voltage, the array is effectively turned “on”. This opens an “inversion layer” between the source and drain electrodes, allowing current to flow freely between the two nodes. The wider the gate voltage is, the greater the level of current flowing through the device.

The operating voltage of the device is determined by the gate-source voltage, which should be greater than the threshold voltage of the device. The device’s drain current is directly proportional to the gate voltage applied, allowing easy control of the device’s output current. Its low on-resistance reduces power dissipation, resulting in greater efficiency and higher overall performance.

The DMC2041UFDB-13 is also designed to minimize power losses across its power MOSFETs. Its high switching speed and high critical rate makes it an ideal choice for high-frequency switching applications. In addition, its power displacement current is significantly lower than conventional power MOSFETs. This reduces the overall power dissipated and the resulting thermal build-up in the device, which can enhance its overall reliability.

Conclusion

The DMC2041UFDB-13 is an ideal solution for many high-frequency switching applications such as power converters, power MOSFETs, and high-speed signal processors. It offers superior performance, high reliability, and low manufacturing costs. Its low on-resistance, high switching frequency, and extended power dissipation makes it an excellent choice for a variety of applications, including automotive, industrial, computer, and communications equipment.

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