Allicdata Part #: | DMC25D1UVT-13DI-ND |
Manufacturer Part#: |
DMC25D1UVT-13 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 25V/12V TSOT26 |
More Detail: | Mosfet Array N and P-Channel 25V, 12V 500mA, 3.9A ... |
DataSheet: | DMC25D1UVT-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.09683 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 25V, 12V |
Current - Continuous Drain (Id) @ 25°C: | 500mA, 3.9A |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 400mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 27.6pF @ 10V |
Power - Max: | 1.3W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | TSOT-26 |
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The DMC25D1UVT-13 is a semiconductor device from the family of Field Effect Transistors. Specifically, it is comprised of an array of MOSFETs (metal oxide semiconductor field-effect transistors). This device is used in a variety of applications, and is particularly regarded for its effectiveness as a switch and amplifier.
A MOSFET works by controlling the voltage of channels inside the device’s channel between the source and the drain. When the voltage of the channel is increased, the drain current is strong and the MOSFET is in its conducting state. When the voltage of the channel is decreased, the drain current declines and the MOSFET becomes non-conducting.
The DMC25D1UVT-13 is comprised of a body that is connected to the gate, the source, and the drain. The body is used as a voltage reference and controls the voltage of the channel between the source and the drain. Inside the body, there are transistors; in the case of the DMC25D1UVT-13, the body part has a dual MOSFET construction. In the MOSFET transistor, the gate and the source are linked to the body and the drain. The arrangement of these components within the device is the “Array” component.
In its switch state, the DMC25D1UVT-13 takes its power from an external power source and the control from a control signal connected to the gate. By changing the voltage of the channel between the source and the drain, as either of the two binary states, the DMC25D1UVT-13 will then switch its state from one to the other. If the voltage of the channel between the source and the drain is high, the MOSFET is in its conducting state and it will allow current to flow through it and create a flow which will power the external load. When the voltage of the channel is decreased and the MOSFET is in its non-conducting state, the current ceases to flow and the device is switched off. In summary, the working principle of the DMC25D1UVT-13 is one of controlling the voltage of the channel between the source and the drain, allowing current to be conducted or not. This action of the MOSFET is governed by an external control signal.
The DMC25D1UVT-13 is suited for a variety of applications, ranging from high frequency, power supply switching, load switching, and load driving to low frequency, low power read/write operations and applications requiring low power consumption. It is also well suited for applications requiring very high switching speed due to its fast switching capabilities.
The DMC25D1UVT-13 is an ideal device for applications requiring fast switching speed and high density. Its fast switching speed and array format allow it to be used in a variety of applications where a large number of switches are needed. Additionally, its low power consumption and low on-resistance allow it to be used in applications that require low power consumption and low voltage operation. In summary, the DMC25D1UVT-13 is an ideal choice for a wide range of power, switching, and load applications. Finally, its high density array format allows it to be used in applications where multiple chips are required.
The specific data is subject to PDF, and the above content is for reference
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