DMC25D0UVT-13

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DMC25D0UVT-13 is an integrated circuit feature with the capability to provide a high slew rate in a bus switch application or a power control in an amplifier configuration within wide temperature and voltage thresholds. The device has an integrated Low Voltage for Shallow Trench Isolation (LVSTI) MOSFET with ultra-low On Resistance (R_On) for improved power and density. The device is packaged in a space efficient 25-terminal WDFN package and is available in both automotive and commercial grade versions. The DMC25D0UVT-13 is ideal for applications including half bridge drivers, power supplies, motor control and automotive systems.

Working Principle: The device is configured as a power MOSFET with a Low-Voltage Shallow Trench Isolation (LVSTI) technology which provides the low on resistance as well as superior thermal performance. The device has three separate ON/OFF gates which allow it to be controlled independently in a single package. An ON/OFF trigger voltage must be applied to each separate gate in order to enable a particular device function. The ON/OFF gates can be individually configured to induce either an N- or P-channel operation. This device supports up to 20V operating voltages and is available for both commercial and automotive grade specifications.

The device is designed to support a wide range of applications such as general purpose switch, analog amplifier, pulse-width modulation device and bus switch. It also supports load-dependent freewheeling (LDF) and load-dependent freewheeling (LDF) with PWM control applications. The device is ideal for applications that require high speed switching, low side or bootstrap switching and for implementing high efficiency power supplies and motor control circuits. The integration of this device with a power supply controller allows the control of the source, drain and gate voltage along with the operating temperature of the device, providing superior temperature compensation and improved power efficiency.

The device utilizes a process called Smart Crystal Technology (SCT) which allows the introduction of a special low temperature controlled active layer between the substrate and the switching transistor. This active layer helps improve the reliability of the device and the effectiveness of the protection circuitry of the device. SCT also reduces the parasitic effects of the device and helps to improve its noise rejection ability, resulting in improved signal integrity.

The device uses a combination of an N-MOSFET with an active layer and a P-MOSFET. When a bias voltage is applied to the N-channel MOSFET, it pulls the drain of the P-channel MOSFET to the same voltage, thereby turning the two MOSFETs ON and providing an output voltage. The device provides controlled ON and OFF times when used in the control of pulse-width modulated signals, ensuring consistent and accurate signal transitions.

Additionally, the device is able to provide a high slew rate, allowing it to switch between different states or output voltages faster and more accurately. This prevents any sudden electrical changes (noise) from occurring in the signal or power line, improving the overall performance of the circuit. In summary, the DMC25D0UVT-13 is an integrated circuit specifically designed to provide high speed switching, low power consumption and improved signal integrity for a wide range of applications.

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