DMG963010R

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Introduction

DMG963010R is a pre-biased bipolar junction transistor (BJT) array. It is based on the latest development in high voltage, low cost process technology, providing high device performance with excellent break-down voltage and improved uniform power dissipation. DMG963010R is packaged in a small SOIC-8 package, providing a small package solution for many types of applications. It is suitable for use in high voltage, low side drive applications that require fast switching of high power.

Applications

DMG963010R is suitable for a wide range of applications including DC/DC converters, power management, automotive power management, and industrial motor control applications. It features fast switching times, low static supply current, low on-resistance, and low thermal resistance. It is able to switch high currents at frequencies up to 200 kHz, making it suitable for high voltage applications such as power amplifier circuits and AC motor drives.

The device is also ideal for applications requiring lower voltage and higher power density. The device is able to switch currents up to 1.25 A at operating voltages of up to 50V, making it suitable for high power, low voltage applications such as power supplies, motor control and switching regulators.

Working Principle

The DMG963010R bipolar array works by utilizing the NPN and PNP transistors as switching elements in a simple configuration. The NPN transistor is used to supply the load and the PNP transistor is used to connect it to the ground. When the voltage of the load is lower than that of the ground, the NPN transistor is turned on, allowing current to be supplied to the load. The PNP transistor is turned on when the voltage of the load is higher than that of the ground, allowing current to flow back to the ground.

The transistors are connected via an emitter resistor which is designed to bias the transistors. This bias controls the behavior of the circuit as it determines how much current is allowed to pass through the transistors. This bias can be adjusted to optimize the performance of the device and to ensure that it meets the application’s requirements.

The DMG963010R is also equipped with protection diodes which protect the transistors from voltage spikes. These protection diodes can absorb large voltage spikes without allowing them to pass through to the transistors. This provides superior over-voltage protection and allows the device to handle high power loads while ensuring that the device remains safe.

The device features a Thermal Shutdown Protection feature that allows the device to protect itself from thermal stress. This feature stops operation when the die temperature of the device reaches a certain point and resumes operation when the die temperature falls below a certain point, preventing damage caused by overheating.

Conclusion

The DMG963010R is a pre-biased bipolar junction transistor array which is ideal for applications requiring both low voltage and high power. It has fast switching times, low static supply current and low on-resistance, making it suitable for power amplifier circuits and AC motor drives. It also features protection diodes and a Thermal Shutdown Protection feature, which provides superior over-voltage protection and allows the device to handle high power loads while ensuring that the device remains safe.

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