Allicdata Part #: | DMG9926USD-13DITR-ND |
Manufacturer Part#: |
DMG9926USD-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 20V 8A SOP8L |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 8A 1.3W Surfac... |
DataSheet: | DMG9926USD-13 Datasheet/PDF |
Quantity: | 12500 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Base Part Number: | DMG9926USD |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.3W |
Input Capacitance (Ciss) (Max) @ Vds: | 867pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 8.8nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 8.2A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMG9926USD-13 is a field-effect transistor (FET) array designed by NXP Semiconductors. It is a monolithic integrated circuit available in a 4-pin SSOP package that provides sixteen discrete FETs. It is a logic-level enhancement-mode MOSFET array. This type of transistor is suitable for different applications including various logic circuits, switches, and amplifiers.
The DMG9926USD-13 has low voltage operation, allowing it to be used in low voltage or space-constrained power designs. The package provides four pins: drain, source, gate, and substrate. The DMG9926USD-13 is a 4-pin SSOP package that is RoHS-compliant and lead-free. The package is 8mm long with a height of 4.4mm.
The DMG9926USD-13 offers significant performance improvements over certain types of JFETs. It is capable of providing greater power, larger gate capacitance, low resistance, low switching power, and high-voltage breakdown performance. The DMG9926USD-13 is suitable for logic circuits, switch circuits, and amplifiers.
The working principle of the DMG9926USD-13 lies in its internal architecture, which uses sixteen small FETs that can be connected in series or in parallel. Each FET has a gate and a drain that provide the primary control of the FET channel. The gate and drain control the channel current and gate voltage respectively, allowing for the transistors to be used for logic circuits, switches and amplifiers. The substrate is used as a back gate to control the FET’s threshold voltage and current levels.
The DMG9926USD-13 can be used for different logic circuit applications, primarily for switching and logic-level digital signal conditioning. The FET array has high-impedance input and low-impedance output performance, which allow the transistors to be used for signal conditioning and amplification purposes. For example, the transistors can be used to create inverting amplifiers, which are commonly used in audio applications. The transistors can also be used to create power amplifiers and linear amplifiers.
The DMG9926USD-13 is also suitable for use in switch circuits and relays. FETs used in switch circuits can be controlled by changing the gate voltages of the FETs. By using the DMG9926USD-13, circuit designers can reduce the number of discrete FETs required to create a switch circuit. This can increase the circuit’s efficiency. The DMG9926USD-13 can also be used for analog signal processing applications, such as filters, oscillators, level translation converters, and analog-to-digital converters.
The DMG9926USD-13 is capable of providing enhanced performance and versatility in many applications such as logic circuits, switch circuits, and amplifiers. The integrated package offers high-impedance inputs and low-impedance outputs, providing designers with a low cost and flexible FET array. The DMG9926USD-13 can be used for boosting switching performance and enhancing system reliability. The FET array also enables designers to reduce their design preparation time and design complexity.
The specific data is subject to PDF, and the above content is for reference
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