DMMT2907A-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMMT2907A-7DITR-ND |
Manufacturer Part#: |
DMMT2907A-7 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2PNP 60V 0.6A SOT26 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 60... |
DataSheet: | DMMT2907A-7 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.09434 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 900mW |
Frequency - Transition: | 307MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-26 |
Base Part Number: | DMMT2907 |
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DMMT2907A-7 is a type of bipolar junction transistor (BJT). It is an Darlington array, with three terminals. It has a compound pair of transistors, consisting of an NPN and PNP transistor configured so that current flowing through the first transistor is amplified by the second one.
The Darlington Array consists of two NPN transistors with their emitters connected together and their bases connected to three independent control signals, E1, E2, and E3. Generally, the VBE of E1 is applied to the base of the first NPN, and the voltage of E2 and E3 is applied to the base of the second NPN, thereby forming a compound transistor. This provides high gain and fast switching, and is ideal for use in logic gates and buffers for digital circuits.
The DMMT2907A-7 has a wide range of application fields, from consumer electronics and telecommunications to scientific instruments and industrial sensors. It is often used in controlling, sensing and measuring circuits as well as amplifying voltage signals. Examples include voltage amplifiers, analog-to-digital converters and transducer drivers.
The operating principle of the DMMT2907A-7 involves the current flowing through the first transistor, which is then amplified by the second one. The current through the first transistor is equal to the sum of the base currents of the two NPN transistors. This allows the Darlington array to provide higher current gains than a single transistor.
The current gain is given by the formula: hFE = hFE1 x hFE2. Where hFE1 and hFE2 are the current gains of the individual transistors and hFE is the current gain of the Darlington array. The DMMT2907A-7 has a maximum hFE of 800, which is significantly higher than that of single transistors. This makes it ideal for high current applications.
In addition to high current gain, the DMMT2907A-7 has other characteristics that make it suitable for a range of applications. It has low saturation voltage, low temperature coefficient, and a low temporal noise characteristic, which makes it well suited to the audio range. It also has a high breakdown voltage of 200V, making it suitable for use in automotive and other high voltage applications.
Overall, the DMMT2907A-7 is a versatile and reliable device, making it suitable for a wide range of applications, from consumer electronics to industrial sensors and scientific instruments. Its high current gain and low saturation voltage, together with a range of other desirable characteristics, make it an ideal choice for many circuits.
The specific data is subject to PDF, and the above content is for reference
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