DMMT3906W-7 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	2 PNP (Dual) Matched Pair
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	200mW
Frequency - Transition:	250MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363
Base Part Number:	DMMT3906

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DMMT3906W-7 Application Field and Working Principle

Introduction

The DMMT3906W-7 is a type of transistor array (TA) manufactured by ON Semiconductor. Specifically, it is a Bipolar Junction Transistor (BJT) Array, which is a special type of semiconductor device that typically consists of a number of transistors arranged in a particular configuration. This type of transistor array is commonly used for applications such as data storage, signal amplification, signal switching, and high frequency switching. In this article, we will discuss the applications and working principle of the DMMT3906W-7 transistor array.

Applications

The DMMT3906W-7 transistor array is most commonly used in applications where multiple transistors are needed to provide an output signal that is equal or greater than the input signal. For example, it can be used for analog-to-digital conversion, amplifying signals, and for switching high-frequency signals. In addition, the transistor array can be used to construct multi-channel amplifiers, motor control units, and auto-zeroing analog integrators.

Working Principle

The working principle of the DMMT3906W-7 transistor array is based on the principle of a BJT. This type of transistor has three terminals: the collector, the base, and the emitter. When a voltage is applied to the base, current flows between the collector-base junction and the emitter-base junction. In the DMMT3906W-7, this current is controlled by the amount of voltage that is applied to the base.As current flows through the transistor array, it is routed to the various transistors in the array. Each of the transistors in the array is biased such that it conducts only when the voltage applied to its base is sufficient to overcome the resistance of the collector-base junction. This allows the circuit to be designed so that the output is equal to or greater than the input.

Conclusion

The DMMT3906W-7 transistor array is a type of BJT array which is used in a variety of applications. It is most commonly used for analog-to-digital conversion, amplifying signals, and for switching high-frequency signals. Its working principle is based on the principle of a BJT, where a voltage applied to the base controls the current that flows between the collector-base junction and the emitter-base junction. This allows the circuit to be designed so that the output is equal to or greater than the input.

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