DMMT3906WQ-7-F Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 PNP (Dual) Matched Pair
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	200mW
Frequency - Transition:	250MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363

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DMMT3906WQ-7-F Application Fields and Working Principles

Introduction

The DMMT3906WQ-7-F is an integrated circuit bipolar transistor array available on the market, with high collector-emitter breakdown voltage, a high gain and a low output capacitance. It is often found in digital and analog circuits, audio amplifiers and automotive electronics. In this article, we will discuss the application fields and working principles of the DMMT3906WQ-7-F.

Product Description

The DMMT3906WQ-7-F is a lateral, NPN bipolar transistor array with four individual transistors. It is manufactured in a lead-less, surface-mount plastic package and is mounted with suitable adhesive. The nominal collector-emitter breakdown voltage of the individual transistor is 10 V, with a guaranteed minimum of 8.4 V. A maximum current gain of 100 and minimum current gain of 10 is specified for the individual transistors. In addition, the switching time from cut-off to saturation is specified at 75 ns or less.

Application Fields

The DMMT3906WQ-7-F has a wide range of applications, particularly in digital and analog circuits. Its high gain and fast switching time make it suitable for use in audio amplifiers and car stereo systems. It can be used in RF applications as an oscillator, demodulator or amplifier. Additionally, it can be used in voltage regulators, precision rectifiers, switching regulators, high-speed oscillators, digital circuits and analog circuits, and can also be used as a reference amplifier in power amplifiers.The DMMT3906WQ-7-F is also used in automotive applications, such as automotive radio receivers, power window circuits and power door locks. Additionally, its low output capacitance and high reverse breakdown voltage make it suitable for use in automotive multiplex systems.

Working Principles

The DMMT3906WQ-7-F is a bipolar transistor array, which means that it consists of four individual NPN transistors packaged together in one device. Each individual transistor is connected in the same way as for any other NPN bipolar transistor: a base terminal, a collector terminal, and an emitter terminal. The base terminal controls the transistor\'s current flow and is used to turn the transistor on or off.When a positive voltage is applied to the base terminal, it creates a charge carrier in the transistor\'s base region, which allows current to flow from the collector to the emitter. This current flow creates a voltage drop across the transistor\'s collector-emitter terminals. The transistor is thus said to be in saturation, when it is conducting current.The transistor\'s current gain is determined by the ratio between the collector and emitter currents, with higher collector-emitter voltages resulting in higher gain. The magnitude of the collector-emitter voltage is limited by the transistor\'s reverse breakdown voltage.

Conclusion

The DMMT3906WQ-7-F is an integrated circuit bipolar transistor array available on the market, with high collector-emitter breakdown voltage, a high gain and a low output capacitance. It is suitable for use in digital and analog circuits, audio amplifiers and automotive electronics. The DMMT3906WQ-7-F is a lateral, NPN bipolar transistor array which consists of four individual transistors, each with a base, collector, and emitter terminal. The transistor\'s current gain is determined by the ratio between the collector and emitter currents, with higher collector-emitter voltages resulting in higher gain.

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