DMMT5551-7-F Discrete Semiconductor Products |
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Allicdata Part #: | DMMT5551-FDITR-ND |
Manufacturer Part#: |
DMMT5551-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2NPN 160V 0.2A SOT26 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) Matche... |
DataSheet: | DMMT5551-7-F Datasheet/PDF |
Quantity: | 21000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) Matched Pair |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-26 |
Base Part Number: | DMMT5551 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DMMT551-7-F is a versatile transistor array with a variety of applications. This small, inexpensive device can be used in a number of different applications, including switching and load driving, amplifier circuits, and signal conditioning.
The DMMT551-7-F is an NPN type multi-epitaxial mesa-isolated transistor array. It contains five transistors in an 8-pin dual-inline package and two separate die, with the two components on each die connected in parallel. This arrangement allows the device to provide additional current gain and output capability when compared to a single transistor. Each of the transistors is capable of providing current-voltage gain of up to 40, depending on the configuration.
The main purpose of the DMMT551-7-F is to handle higher currents than can be provided by a single transistor. It can handle up to 100mA of continuous current and up to 350mA of pulsed current, and can also be used to power a variety of low-power, low-voltage applications. The device can be used in a variety of switching and load driving applications, as well as in amplifier circuits and signal conditioning.
The DMMT551-7-F is designed for a variety of applications and has a wide operating temperature range, from -55 to +150 degrees Celsius. It also has a range of on-state and off-state characteristics, depending on the particular application. The on-state characteristics of the device include the forward voltage drop at the gate, the threshold voltage, the saturation voltage, and the transition frequency.
The working principle of the DMMT551-7-F is relatively simple. When the gate voltage is increased, the device turns on and conducts current between the collector and the emitter. The current then passes through an external load and the collector current is limited by the base current. As the collector current increases, the base current has to be increased to keep the device conducting. When the base current reaches its maximum, the device then enters into saturation and the voltage at the collector is limited to approximately the same level as the base-emitter voltage.
The DMMT551-7-F is a versatile transistor array designed for a range of applications. It is capable of handling high currents and can also be used for low power, low voltage applications. It has a wide operating temperature range and a range of on-state and off-state characteristics depending on the application. The device is easy to use and its working principle is relatively straightforward. With its wide range of applications and features, the DMMT551-7-F is an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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