DMS3017SSD-13

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	8A, 6A
Rds On (Max) @ Id, Vgs:	12 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	30.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1276pF @ 15V
Power - Max:	1.19W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC

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.DMS3017SSD-13 Application Field and Working PrincipleThe DMS3017SSD-13 is a member of a series of semiconductor devices called field-effect transistors (FETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs). FETs are high-speed switching devices that can be used to amplify and switch signals in a variety of applications. MOSFETs are particularly useful for providing high-power switching with very low input withstand voltage. The DMS3017SSD-13 is an array consisting of four FETs and four MOSFETs in an 8-lead DIP package.General OverviewFETs and MOSFETs are power devices that rely on the electric field between two active regions—the source and the drain—to control the flow of current through the device. When a voltage is applied to the gate (or control electrode), the electric field is activated, which results in a controlled current flow between the source and the drain. The electric field created by the gate voltage also controls the resistance of the device, which is known as the on-resistance.The DMS3017SSD-13 is an array of four discrete FETs and four MOSFETs, which are both n-channel devices. The array is primarily used to provide high-power switching with very low input withstand voltage. The FETs have an on-resistance of 5 ohms, while the MOSFETs have an on-resistance of 1.8 ohms. The package also includes a built-in diode to provide ESD protection to the device.ApplicationsThe DMS3017SSD-13 array is suitable for a wide range of applications, including high-efficiency motor control, power switching, and power supply design. The array can be used as a power switch or for analog signal processing, such as motor control, PWM (Pulse-Width Modulation) signaling, and voltage-controlled current sources. The DMS3017SSD-13 array is ideal for use in switching power supplies and in automotive and industrial applications where high-power switching is needed with low input voltage and high current ratings. It is also an excellent choice for power supply design due to its low on-resistance and ESD protection feature.The array is also used in frequency converters, which convert AC signals to DC signals as well as controlling the voltage and frequency of AC signals. The array is also well-suited to a variety of other high-frequency applications including mobile devices, computers, and digital audio. Working PrincipleThe DMS3017SSD-13 array works by using the electric field between the source and gate electrode to control the flow of current through the device. When a voltage is applied to the gate, the electric field is activated, which results in a controlled current flow between the source and the drain. The electric field also controls the resistance of the device, which is known as the on-resistance. The FETs in the array have an on-resistance of 5 ohms, while the MOSFETs have an on-resistance of 1.8 ohms. This allows for high-power switching with very low input voltage requirements. The package also includes a built-in diode to provide ESD protection to the device. This diode helps protect the device from damage due to sudden increases in voltage.ConclusionThe DMS3017SSD-13 is an array consisting of four FETs and four MOSFETs in an 8-lead DIP package. It is suitable for a wide range of applications, including high-efficiency motor control, power switching, and power supply design. The array works by using the electric field between the source and gate electrode to control the flow of current through the device. The on-resistance of the FETs and MOSFETs is 5 ohms and 1.8 ohms, respectively, which allows for high-power switching with very low input voltage requirements. The package also includes a built-in diode to provide ESD protection to the device.

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