DMS3016SSS-13 Allicdata Electronics
Allicdata Part #:

DMS3016SSS-13DITR-ND

Manufacturer Part#:

DMS3016SSS-13

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 9.8A 8SO
More Detail: N-Channel 30V 9.8A (Ta) 1.54W (Ta) Surface Mount 8...
DataSheet: DMS3016SSS-13 datasheetDMS3016SSS-13 Datasheet/PDF
Quantity: 1000
1 +: $ 0.14000
10 +: $ 0.13580
100 +: $ 0.13300
1000 +: $ 0.13020
10000 +: $ 0.12600
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.54W (Ta)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 1849pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 13 mOhm @ 9.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMS3016SSS-13 is a type of MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) which is a type of transistor that is used in a variety of applications. This type of MOSFET is used in Integrated Circuits (ICs) and is extremely powerful.

The MOSFET was invented in the 1960s and has since become a staple in the electron industry. MOSFETs are used in a variety of applications, both discrete and integrated circuits. They are used to control current, provide protection, and act as a switch.

A MOSFET works by controlling the flow of current through the gate. The gate is an insulated area which is located between the drain and source. When a voltage is applied to the gate, it causes a change in voltage across the source and drain, which results in a current flowing through the transistor.

In the case of the DMS3016SSS-13, this type of MOSFET is designed for use in high speed switching applications where speed and performance are important. This type of MOSFET can work with up to 25mA of current and up to 20V of voltage. It has an operating power consumption of up to 1.3W.

The DMS3016SSS-13 is a single-gate MOSFET with a maximum gate-source voltage of 20V. It has an avalanche capability of 40V and is capable of maximum current of up to 25mA. The DMS3016SSS-13 is designed for operating temperatures of -55°C to 175°C.

In terms of applications, the DMS3016SSS-13 is designed for use in high speed switching circuits where speed and power are important considerations. It is used in circuits such as analog-digital converters, sample-and-hold circuits, power management circuits, and clock generation circuits. It is also used in automotive, industrial, and other switching applications.

The working principle of the DMS3016SSS-13 is based on the basic principles of MOSFETs. When a voltage is applied to the gate, it causes a change in voltage across the source and drain, which results in a current flowing through the transistor. This current can be controlled and regulated by adjusting the voltage on the gate. This allows the transistor to act as a switch that can switch between on and off states.

In conclusion, the DMS3016SSS-13 is a single-gate MOSFET designed for high speed switching applications. It is capable of operating with up to 25mA of current and up to 20V of voltage. It has an operating power consumption of up to 1.3W. It is used in a variety of applications such as analog-digital converters, sample-and-hold circuits, power management circuits, and clock generation circuits. The working principle of the DMS3016SSS-13 is based on the basic principles of MOSFETs.

The specific data is subject to PDF, and the above content is for reference

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