
Allicdata Part #: | DMS3016SFG-7-ND |
Manufacturer Part#: |
DMS3016SFG-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 7A PWRDI3333-8 |
More Detail: | N-Channel 30V 7A (Ta) 980mW (Ta) Surface Mount Pow... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 980mW (Ta) |
FET Feature: | Schottky Diode (Body) |
Input Capacitance (Ciss) (Max) @ Vds: | 1886pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 44.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 11.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMS3016SFG-7 is a transistor component made by Vishay, suitable for operations in the 10A-30V range. It is a specifically designed N-channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) component, and is applicable to a wide range of uses where the basic principles of a MOSFET component is driven by and leveraged from. To understand the practical usage of this component and the physics behind it, this article will give an overview of the component’s application field and working principle.
Application Field
The DMS3016SFG-7 is a component suitable for use in low- to medium-power switching operations, such as computer motherboards, rectifier bridges, and power conversion equipment. The component is able to handle up to 30V and up to 10A of current, making it suitable for use in devices such as motors, power switches, and power converters. Moreover, since MOSFETs are voltage-controlled devices, they are able to respond to very small voltage changes, making them suitable for use in precision control devices as well.
Working Principle
The underlying working principle of the DMS3016SFG-7 component is based on its construction and its material makeup – the device is essentially composed of two semiconductor layers, a channel layer and a gate layer. The channel layer has two sources and drains respectively, with gate between them. The gate controls the current going through the channel by maintaining a field of electric charges.
The source and the drain are connected to power sources of different voltage levels, and trapped electrons are present near the gate. By applying a positive voltage to the gate, the trapped electrons are attracted, moving away from the gate and the channel and reducing the electric field. This reduces the resistance between the source and the drain, allowing current to flow.
In contrast, if the negative voltage is applied to the gate, the trapped electrons are repelled, increasing the electric field and raising the resistance between the source and the drain. This effectively stops current flow. This is how the MOSFET component, such as the DMS3016SFG-7, is able to control the flow of current between two voltage sources.
Summary
The MOSFET component of the DMS3016SFG-7 is suitable for low- to medium-power switching operations, such as those in computing motherboards, rectifier bridges and power conversion equipment. The component is able to quickly respond to voltage changes, allowing and blocking current flow between two voltage sources. Ultimately, this component can be used as a reliable replacement in a variety of medium-power activities due to its performance in voltage control and current regulation.
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