| Allicdata Part #: | DRC3115E0LTR-ND |
| Manufacturer Part#: |
DRC3115E0L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Panasonic Electronic Components |
| Short Description: | TRANS PREBIAS NPN 100MW SSSMINI3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: |  DRC3115E0L Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Specifications
| Resistor - Emitter Base (R2): | 100 kOhms |
| Base Part Number: | DRC3115 |
| Supplier Device Package: | SSSMini3-F2-B |
| Package / Case: | SOT-723 |
| Mounting Type: | Surface Mount |
| Power - Max: | 100mW |
| Current - Collector Cutoff (Max): | 500nA |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Series: | -- |
| Resistor - Base (R1): | 100 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 100mA |
| Transistor Type: | NPN - Pre-Biased |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
Description
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The DRC3115E0L is a single pre-biased bipolar transistor (BJT) commonly used in electronic circuits. It is produced by the famous American semiconductor manufacturer, Texas Instruments. This device is popular in the radio frequency (RF) market, and it is also used in some industrial and consumer electronics applications.The pre-biased transistor consists of a NPN transistor, with a pre-determined base-emitter voltage. This voltage is pre-programmed on the chip during its manufacturing process. The emitter of the pre-biased device is connected to the collector of the main transistor, forming a bipolar transistor. This type of transistor provides a high gain across the entire operating frequency range, up to 10 GHz.This type of transistor is commonly used in circuits that require wide frequency operation and wide voltage operation. These types of circuits typically require low power levels and faster operating speeds. The DRC3115E0L allows for wide operating frequency and wide operating voltage coverage, making it well suited for such applications. Furthermore, the low power requirements and higher speed of the circuit make it ideal for high-end RF applications.The DRC3115E0L is fabricated using a CMOS process, an important feature because it allows for better manufacturing control compared to bipolar transistors. This means that the device can be easily customized and optimized for the specific application. This device is also capable of withstanding high temperature operation, which means that the device can be used in harsh environments, where temperatures can reach over 100 °C.The working principle of the DRC3115E0L is relatively straightforward. It functions by allowing current to flow from the collector to the emitter when a voltage is applied to the base. This base voltage is referred to as the bias voltage, and it can be adjusted to achieve different levels of current gain. The device also utilizes an internal temperature protection system that prevents it from operation at overly high temperatures.In addition to the features mentioned above, the DRC3115E0L transistor also offers high-speed switching capabilities and low saturation voltage. This device is also capable of withstanding high levels of power, up to a maximum of 20 watts. The device is rated to work with a supply voltage range of 3 to 20 V, which means it can operate across a wide range of power supplies.The DRC3115E0L is an excellent choice for a wide range of RF and other applications. It provides a high-quality performance over a wide range of frequency and voltage operation, and its internal temperature protection system ensures reliable operation in harsh environments. Furthermore, its high-speed switching capabilities and low saturation voltage make it well suited for high-performance applications.The specific data is subject to PDF, and the above content is for reference
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