DRC3115G0L Discrete Semiconductor Products

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DRC3115G0L is a single pre-biased bipolar junction transistors (BJT) designed for general purpose, medium voltage, medium current and high-speed switching applications in industrial and commercial buildings. It is intended as a direct replacement for standard silicon-based, pre-biased transistors. DRC3115G0L makes use of specialized design techniques to achieve high performance characteristics and very low power consumption. It is capable of operating up to 50 V without the need for a heat sink, and it can attain gains of up to 140. The device can also be successfully operated up to a temperature rating of 175°C.

Working Principle:

DRC3115G0L transistors are basically current-controlled devices that use a mechanism known as “vertical diffusion” to achieve the desired switching effect. When an electrical current is applied at the base contact, it induces a strong electric field that affects the “vertical” state (hence the name) of the device. This in turn creates a semiconductor junction that acts to break-down the current into charge carriers (electrons and holes). The negatively charged electrons are attracted to the collector, while the positively charged holes are attracted to the emitter. As such, the device is able to switch electrical current from the collector to the emitter.

Applications:

DRC3115G0L transistors are able to provide excellent performance for a wide range of applications. These include high-speed switching for linear applications, such as in power and motor control, as well as for digital logic circuits, analog signal processing, and pulse triggering. Other applications include audio amplifiers, switching power supplies, solenoid control, voltage regulators, as well as lighting and instrumentation. Additionally, since it is pre-biased, it can be effortlessly utilized in discrete applications, such as in SMPS or DC/DC converters.

DRC3115G0L transistors are well-suited for use in withstanding high temperatures in environments such as machinery, automotive or any harsh industrial application. Additionally, the device offers an ultra-low power on-state resistance and very low input capacitance for improved speed and efficiency. With an operating temperature range of 0-175°C and high-speed switching, these transistors are ideal for a variety of medium voltage, current and power applications.

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