DS1230AB-200+ Allicdata Electronics
Allicdata Part #:

DS1230AB-200+-ND

Manufacturer Part#:

DS1230AB-200+

Price: $ 20.92
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 256K PARALLEL 28EDIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: DS1230AB-200+ datasheetDS1230AB-200+ Datasheet/PDF
Quantity: 65
1 +: $ 19.01340
10 +: $ 18.06080
25 +: $ 16.67640
50 +: $ 15.84260
100 +: $ 14.33470
250 +: $ 13.61800
Stock 65Can Ship Immediately
$ 20.92
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 200ns
Access Time: 200ns
Memory Interface: Parallel
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-EDIP
Base Part Number: DS1230AB
Description

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DS1230AB-200+ memory is an integrated circuit device that can store digital information for a short period of time. It is a form of volatile memory, meaning that when the power supply is removed, the stored data will be lost. The DS1230AB-200+ memory is comprised of multiple RAM chips joined together on the same circuit board. It is typically used for applications that require a large amount of storage capacity or need to keep data for a long period of time.

The DS1230AB-200+ memory is commonly used in computers and other digital electronic devices, such as digital cameras and video game consoles. It can also be used in medical and military equipment as well as various other industrial applications. In these applications, the DS1230AB-200+ memory can be used to store large amounts of data, such as medical images or military tactical data.

The working principle of the DS1230AB-200+ memory is relatively simple. It consists of multiple RAM chips which are connected to the same circuit board. Each of these RAM chips contains a memory cell and is connected to a common power source. When power is supplied to the memory, the cells in each RAM chip are energized and data can be written to and read from the memory.

The cells in each RAM chip can store a single bit of data at any given time. When data is written to a memory cell, the cell’s charge is changed to represent the bit. To read the data, the charge is measured and compared to a predetermined value to determine the value of the bit.

The DS1230AB-200+ memory is a reliable and efficient form of memory for a variety of applications. Its large capacity makes it ideal for applications that require large amounts of storage and need to retain data for a long period of time. The use of multiple RAM chips also helps to increase the reliability of the device, as failure in one memory cell does not necessarily mean failure of the entire device.

The DS1230AB-200+ is also relatively simple to use and maintain. It does not require complicated setup and its working principle is straightforward. With its high storage capacity and efficient operation, the DS1230AB-200+ memory is an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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