Allicdata Part #: | DS1230Y-200+-ND |
Manufacturer Part#: |
DS1230Y-200+ |
Price: | $ 23.04 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | IC NVSRAM 256K PARALLEL 28EDIP |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ... |
DataSheet: | DS1230Y-200+ Datasheet/PDF |
Quantity: | 85 |
1 +: | $ 20.94750 |
10 +: | $ 19.90230 |
25 +: | $ 18.37660 |
50 +: | $ 17.45770 |
100 +: | $ 15.79000 |
250 +: | $ 15.00060 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 200ns |
Access Time: | 200ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 28-DIP Module (0.600", 15.24mm) |
Supplier Device Package: | 28-EDIP |
Base Part Number: | DS1230Y |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DS1230Y-200+ is a kind of Memory module. It is widely used for storing data or instructions for later access and reference. As for its application field, the DS1230Y-200+ is mainly used in industrial computer systems and embedded systems, such as process control, communications systems, robotics and so on.
In terms of its working principle, the DS1230Y-200+ is based on the static random access memory (SRAM) technology. It is a kind of a premempartitie type of semiconductor integrated circuit, which is composed of many tiny memory cells inside. Each memory cell consists of small capacitors, transistors and other components, and has the functions including cycle and hold, as well as read and write.
Generally, the write operations to the DS1230Y-200+ are state-dependent. It takes two cycles to write data into the memory. In the first cycle, the write command is sent to the table gate, and then in the second cycle, the data to be written already stored in the decoder will be written into the memory. During the write process, users are able to control the internal signals so that the data writing process can be effectively controlled.
As for the read operations, it can be done in one cycle instead of two. After the read command is sent to the table gate, the stored data can be output from the individual cells inside the module. In addition, the reading process should also take in account the decoder signals to achieve the timings, as well as the voltage levels for data fetching purpose.
All in all, the DS1230Y-200+ Memory module is a reliable and high-efficiency memory solution, especially for industrial computer systems or embedded systems. It stores data in an organized and secure manner, allowing users to access and retrieve the data with ease.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
P270-DS12R5K | TT Electroni... | 5.39 $ | 1000 | POTENTIOMETEROhm Gang ... |
DS1259S | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER 16-SOI... |
DS1259 | Maxim Integr... | -- | 62 | IC BATTERY MANAGER 16-DIP... |
DS1259N | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER IND 16... |
DS1259SN | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER IND 16... |
DS1259S/T&R | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER IND 16... |
DS1259SN/T&R | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER IND 16... |
DS1259S+ | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER 16-SOI... |
DS1259+ | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER 16-DIP... |
DS1259SN+ | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER IND 16... |
DS1259S+T&R | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER 16-SOI... |
DS1259SN+T&R | Maxim Integr... | 0.0 $ | 1000 | IC BATTERY MANAGER IND 16... |
DS1244WP-120 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1244YP-70 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1244WP-120IND | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1244W-120 | Maxim Integr... | 0.0 $ | 1000 | IC SRAM 256K 3.3V 120NS 2... |
DS1248YP-70 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1248WP-120 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1244W-120IND | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 28-DIP... |
DS1248WP-120IND | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1248W-120 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 32-DIP... |
DS1248Y-100IND | Maxim Integr... | -- | 1000 | IC RTC PHANTOM PAR 32-DIP... |
DS1248W-120IND | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 32-DIP... |
DS1251YP-70 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1251WP-120 | Maxim Integr... | -- | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1251W-120 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 32-DIP... |
DS1251Y-70 | Maxim Integr... | -- | 1000 | IC RTC PHANTOM PAR 32-DIP... |
DS1251WP-120IND | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 34-PCM... |
DS1251W-120IND | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 32-DIP... |
DS1254WB-150 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 168-BG... |
DS1254YB-100 | Maxim Integr... | 0.0 $ | 1000 | IC RTC PHANTOM PAR 168-BG... |
DS12885QN | Maxim Integr... | 0.0 $ | 1000 | IC RTC W/RAM 128 BYTE IND... |
DS12885SN | Maxim Integr... | 0.0 $ | 1000 | IC RTC CLK/CALENDAR PAR 2... |
DS12885N | Maxim Integr... | 0.0 $ | 1000 | IC RTC CLK/CALENDAR PAR 2... |
DS12885 | Maxim Integr... | -- | 1000 | IC RTC CLK/CALENDAR PAR 2... |
DS12885T/T&R | Maxim Integr... | 0.0 $ | 1000 | IC RTC CLK/CALENDAR PAR 3... |
DS1284Q/T&R | Maxim Integr... | 0.0 $ | 1000 | IC RTC CLK/CALENDAR PAR 2... |
DS1284QN/T&R | Maxim Integr... | 0.0 $ | 1000 | IC RTC CLK/CALENDAR PAR 2... |
DS12885QN/T&R | Maxim Integr... | 0.0 $ | 1000 | IC RTC CLK/CALENDAR PAR 2... |
DS12885S/T&R | Maxim Integr... | 0.0 $ | 1000 | IC RTC CLK/CALENDAR PAR 2... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...