Allicdata Part #: | DS1245BL-70-ND |
Manufacturer Part#: |
DS1245BL-70 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | IC NVSRAM 1M PARALLEL 34LPM |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8... |
DataSheet: | DS1245BL-70 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.75 V ~ 5.25 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 34-LPM |
Supplier Device Package: | 34-LPM |
Base Part Number: | DS1245BL |
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The DS1245BL-70 is a nonvolatile memory from National Semiconductor, which has a variety of applications in different sectors, ranging from commercial to industrial uses. The most common use of the DS1245BL-70 is in the storage of data and programs in smaller, often portable applications such as keyboards, PDAs, embedded devices, and industrial controllers. Its features, such as low power consumption and fast data access, make it perfect for such applications.
The DS1245BL-70 is a nonvolatile, write-protected 64K x 8 EEPROM memory, which means that it can store up to 8 Kbytes of data. This makes the device ideal for storing relatively small amounts of data, such as small program instructions, tables, and configurational settings. The device also has other benefits such as low power consumption due to its self-timed write cycle and fast data access time of 250 ns.
The working principle of the DS1245BL-70 is based on a principle different from that of a traditional memory chip. Instead of using a standard memory cell composed of transistors and capacitors, the device uses a phenomenon called ferroelectricity which is found in certain types of nonvolatile RAM (NVRAM). This means that the memory does not require constant refreshing, like a conventional DRAM, but instead can retain its data for long periods of time without the need for additional power.
The advantage of using ferroelectric RAM is that it is faster, more reliable, and occupies far less board space than conventional NVRAM. The quick access time, low power consumption and small size make the device suitable for many applications. Another advantage of this technology is that the data stored in the chip is nonvolatile, meaning that it will retain its data even after power is removed. This is important for applications such as embedded controllers and industrial controllers, where power supply interruptions are more common than in other areas.
In summary, the DS1245BL-70 is an ideal device for applications where a small amount of data needs to be stored and accessed quickly, such as embedded controllers and industrial controllers. Its advantages include its small size, low power consumption, and nonvolatile memory. Its working principle is based on ferroelectricity, a phenomenon which allows it to retain its data for long periods of time without additional power, and its fast data access time of 250 ns make it well suited for many different applications.
The specific data is subject to PDF, and the above content is for reference
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