![DS2505+T&R Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | DS2505+T&RTR-ND |
Manufacturer Part#: |
DS2505+T&R |
Price: | $ 1.16 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | IC EPROM 16K 1WIRE TO92-3 |
More Detail: | EPROM - OTP Memory IC 16Kb (16K x 1) 1-Wire® 15µs... |
DataSheet: | ![]() |
Quantity: | 1000 |
2000 +: | $ 1.04571 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EPROM |
Technology: | EPROM - OTP |
Memory Size: | 16Kb (16K x 1) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 15µs |
Memory Interface: | 1-Wire® |
Voltage - Supply: | -- |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | DS2505 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DS2505+T&R is a technologically advanced memory system used across a wide range of applications. This device offers multiple features such as a high-speed interface, multiple I/O configurations, and a wide range of capacities. Its key features make it an ideal solution for many applications, including automotive, industrial, medical, consumer, and automotive electronics.
The DS2505+T&R memory system is composed of a 128-bit nonvolatile, non-systemic random access memory (RAM) block, known as GRAM. This block contains predetermined user-defined memory configurations that can be accessed via the high-speed serial interface. This interface allows for quick data exchange and easy integration into systems with multiple devices. The GRAM block provides 4096 bytes of nonvolatile data storage for multiple applications.
The DS2505+T&R utilizes a wide range of memory operations, including read, write, erase, and program. The read operation is performed by sending a command byte (CAS) to the GRAM address and a data byte is received in return. Its write operation is initiated by sending a CAS and data byte, followed by a write enable (WE). Its erase operation is initiated by sending a CAS followed by an erase enable (EE) signal. Its program operation can be used to store data blocks into the GRAM memory and allows multiple memory cycles simultaneously.
In addition to its memory features, the DS2505+T&R also includes programmable logic to control signal polarity, enable/disable logic, and enable/disable timeouts. It also supports voltage up to 6.5 volts, ensuring an efficient and robust operation. Furthermore, the device is capable of operating in temperatures between -40°C and +125°C.
The DS2505+T&R memory system is an ideal choice for various industrial and consumer applications, due to its high-speed interface, multiple I/O configurations, and wide range of capacities. Its multiple features make it the perfect solution for a wide range of applications. Its low power consumption, reliability, and robust data security make it an ideal choice for embedded and automotive applications, as well as consumer electronics.
The DS2505+T&R can also be used for a variety of telecommunication and networking applications, due to its high-speed interface, low power consumption, and multiple I/O configurations. This makes it a great choice for applications such as VOIP, LTE, and 4G/5G cellular systems. The device is also highly reliable, providing robust data security and low power consumption.
The DS2505+T&R is a highly efficient and robust memory system, suitable for a wide range of applications. Its memory features, multiple I/O configurations, and low power consumption make it an ideal solution for various embedded and automotive applications, as well as consumer and telecommunications applications. It is also a reliable and robust option for applications requiring data security and low power consumption.
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