
Allicdata Part #: | DS28EL35QA-742+2BW-ND |
Manufacturer Part#: |
DS28EL35QA-742+2BW |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | SECURE AUTHENTICATOR TDFN |
More Detail: | Memory IC |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | -- |
Memory Format: | -- |
Technology: | -- |
Memory Size: | -- |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | -- |
Operating Temperature: | -- |
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Memory serves an important role for data storage in modern applications and technology. The DS28EL35QA-742+2BW memory is an extension to the range of high-performance memory technologies available. It is designed to provide customers with more speed and increased storage capacity.
Advantages
The primary advantages of the DS28EL35QA-742+2BW memory are the increased speed, enhanced power efficiency, and larger storage capacity. The memory is designed to be low profile, so it can fit within applications that have limited space requirements.
The memory also benefits from its advanced features that focus on data integrity and performance. The device can detect and correct errors to maintain data accuracy and reliability. It includes FPGA-specific functions that are integrated with hardware core leveling support. These features provide reliable performance, especially when writing and reading data from memory.
Application Field and Working Principle
The DS28EL35QA-742+2BW memory is ideal for a wide range of applications that require fast data storage and reliable performance. This includes storage and data transmission applications in communication networks and consumer electronics. It can also be used in applications such as embedded systems, industrial automation, and medical imaging.
The working principle of the DS28EL35QA-742+2BW memory is based on Flash and SRAM technology. The data is stored in two layers of memory, the flash and SRAM. The flash layer is used for storing large amounts of data, and the SRAM is used for fast access to the data. Both layers are managed by the dedicated controller, which is designed to ensure high-quality and reliable performance.
The main features of the DS28EL35QA-742+2BW memory include support for SDR, DDR, and RLDRAM memory architectures. It also supports Error Correcting Code (ECC), providing enhanced data reliability. The device is powered by 1.8 volts and supports an operating temperature range up to 105°C. It has a low-power mode and supports an array of advanced features including accelerated write and read operations and robust wear-leveling.
Conclusion
The DS28EL35QA-742+2BW memory is a high-performance memory technology for advanced applications. It is designed to provide customers with fast data storage and reliable performance. The memory has features such as ECC, accelerated write and read operations, and wear-leveling that improve data reliability and performance. These features make the DS28EL35QA-742+2BW memory ideal for a wide range of applications that require data storage and reliable performance.
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