DXT2011P5Q-13 Allicdata Electronics

DXT2011P5Q-13 Discrete Semiconductor Products

Allicdata Part #:

DXT2011P5Q-13DITR-ND

Manufacturer Part#:

DXT2011P5Q-13

Price: $ 0.21
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: PWR LOW SAT TRANSISTOR PDI5
More Detail: Bipolar (BJT) Transistor NPN 100V 6A 130MHz 3.2W S...
DataSheet: DXT2011P5Q-13 datasheetDXT2011P5Q-13 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.18655
10000 +: $ 0.17964
Stock 1000Can Ship Immediately
$ 0.21
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Power - Max: 3.2W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: PowerDI®5
Description

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Transistors are a type of two terminal electronics component used in a variety of different applications. A DXT2011P5Q-13 is a single Bipolar Junction Transistor (BJT) which is used to control the flow of electrical current. This transistor is a PNP type and is used primarily in switch mode applications.
The DXT2011P5Q-13 is a general purpose transistor which is used in many different switch mode applications and has a wide range of uses. It can be used to invert and amplify signals or to switch DC or AC current in applications such as power supplies, motors, and inverters. The transistor also has excellent linearity, allowing it to be used in more sophisticated circuit designs.
The DXT2011P5Q-13 is designed to be a reliable, low cost, and highly efficient transistor. It has a maximum rated voltage of 60V and a maximum peak collector current of 1.5A. The temperature range for this transistor is -40C to +85C, making it suitable for a wide variety of applications. It also has a low junction capacitance value which helps it operate at high frequencies with minimal distortion.
The working principle of the DXT2011P5Q-13 is based on the NPN transistor. When the base connection is positive with respect to the emitter connection, the base-emitter junction is forward biased. This allows electrons to flow from the emitter to the base, creating a large number of holes in the base region. This causes current to flow between the collector and emitter connection, allowing current to flow through the transistor.
The biggest advantage of a DXT2011P5Q-13 is its low cost and high efficiency. It is not as powerful as some of other more expensive transistors, but it is reliable and can be used in a variety of applications. It can be used to switch DC or AC current, invert and amplify signals, and has excellent linearity for more sophisticated designs. The low junction capacitance helps reduce distortion when operating at high frequencies and the temperature range makes it suitable for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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