DXT2013P5-13 Discrete Semiconductor Products |
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Allicdata Part #: | DXT2013P5-13TR-ND |
Manufacturer Part#: |
DXT2013P5-13 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 100V 5A POWERDI5 |
More Detail: | Bipolar (BJT) Transistor PNP 100V 5A 125MHz 3.2W S... |
DataSheet: | DXT2013P5-13 Datasheet/PDF |
Quantity: | 5000 |
5000 +: | $ 0.14969 |
10000 +: | $ 0.14414 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 340mV @ 400mA, 4A |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 1V |
Power - Max: | 3.2W |
Frequency - Transition: | 125MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerDI™ 5 |
Supplier Device Package: | PowerDI™ 5 |
Base Part Number: | DXT2013P5 |
Description
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The DXT2013P5-1 is a single Bipolar Junction Transistor (BJT). It is a type of small signal transistor, designed to handle moderately high power switching applications, such as light dimmers and audio amplifiers, as well as other applications requiring low gate current or low gate voltage.
The DXT2013P5-1 is a NPN transistor, meaning it consists of a base, collector and emitter, with the electrons and holes flowing through the p-type emitter-base junction and n-type collector-base junction. This type of transistor is called a bipolar junction transistor because of the two “bipolar” p-n junctions.
The DXT2013P5-1 transistor has a maximum collector current of 20 mA and a maximum collector-emitter voltage of 40V. This makes it suitable for most low voltage, low current load circuits, such as light dimmer circuits, audio amplifiers, and motor control circuits. It also has a low to moderate switching speed, making it suitable for pulse width modulation (PWM) applications, as well as other applications requiring low turn-on and turn-off times.
The DXT2013P5-1 transistor is a current-controlled device, which means that it can be used to amplify or switch a current or voltage. To switch a signal on or off using the transistor, the base current must be changed. This is done by connecting a signal to the base of the transistor. When the signal is low, the base current is low and the transistor is in its “off” state. When the signal is high, the base current is high and the transistor is in its “on” state. This allows the transistor to be used as a switch, amplifying an input signal or voltage to an output signal or voltage.
The DXT2013P5-1 transistor can also be used as an amplifier. To amplify a signal, the base current must be varied in order to modulate the collector current. The collector current is then used to drive an output load, resulting in an amplified output signal. This type of amplification is known as trans-resistance amplification, and is one of the main uses of BJT transistors.
In conclusion, the DXT2013P5-1 is a single bipolar junction transistor (BJT), which is used mainly as a switch and an amplifier. It has a maximum collector current of 20 mA and a maximum collector-emitter voltage of 40V. It is well suited for light dimmer circuits, audio amplifiers and motor control circuits, as well as other applications requiring low gate current or low gate voltage. It is also suitable for pulse width modulation (PWM) applications, due to its low to moderate switching speed.
The specific data is subject to PDF, and the above content is for reference
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