DXT2012P5-13 Allicdata Electronics

DXT2012P5-13 Discrete Semiconductor Products

Allicdata Part #:

DXT2012P5-13TR-ND

Manufacturer Part#:

DXT2012P5-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 60V 5.5A POWERDI5
More Detail: Bipolar (BJT) Transistor PNP 60V 5.5A 120MHz 3.2W ...
DataSheet: DXT2012P5-13 datasheetDXT2012P5-13 Datasheet/PDF
Quantity: 15000
Stock 15000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 5.5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Power - Max: 3.2W
Frequency - Transition: 120MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: PowerDI™ 5
Base Part Number: DXT2012P5
Description

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The DXT2012P5-13 is a transistors - bipolar (BJT) - single, which is used in a variety of applications.

The particular advantage of this device is that it can provide high current gain and low input and output capacitance. The internal configuration of the device is a single NPN bipolar junction transistor, with a base emitter resistor and an emitter collector resistor. The main features of this device are its high current gain, low input and output capacitance, and its low power consumption.

The DXT2012P5-13 is typically used in applications such as switching, amplifying, and driving circuits, although other applications are possible. In particular, it is used in high-speed applications where high speed switching is necessary. For example, it is often used in high-speed applications such as PLLs and DSPs where fast switching and reliable operation are important.

The working principle behind the device is simple: when the base emitter is forward-biased, the current flows through the transistor, connecting the emitter and the collector and thus acting as an amplifier. The transistor acts as an amplifier because the gain of the transistor is proportional to the current flowing through the transistor. By varying the current through the transistor, the gain of the amplifier can be adjusted.

In addition, the DXT2012P5-13 has the ability to provide protection against transient signals, which can damage other components in the circuit. This protection is provided by the built-in EMC suppression diode, which prevents the device from becoming damaged by any sudden surges in the circuit. This diode also helps protect the device from temporary voltage drops, ensuring reliable operation of the device.

Overall, the DXT2012P5-13 is a versatile single NPN bipolar junction transistor with a wide range of applications. Its features and protection capabilities make it an ideal choice for high-speed switching and amplifying circuits, as well as for general usage in a variety of other applications.

The specific data is subject to PDF, and the above content is for reference

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