DXT2014P5-13 Discrete Semiconductor Products |
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Allicdata Part #: | DXT2014P5-13TR-ND |
Manufacturer Part#: |
DXT2014P5-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 140V 4A POWERDI5 |
More Detail: | Bipolar (BJT) Transistor PNP 140V 4A 120MHz 3.2W S... |
DataSheet: | DXT2014P5-13 Datasheet/PDF |
Quantity: | 5000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 140V |
Vce Saturation (Max) @ Ib, Ic: | 360mV @ 300mA, 3A |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 5V |
Power - Max: | 3.2W |
Frequency - Transition: | 120MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerDI™ 5 |
Supplier Device Package: | PowerDI™ 5 |
Base Part Number: | DXT2014P5 |
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Introduction
The DXT2014P5-13 is a single bipolar Junction Transistor (BJT) device, specifically designed for applications in the industrial and consumer electronics industries. It features an ultra-low voltage and low power solution, and has a wide range of application fields. This document will discuss the application fields of the DXT2014P5-13, and the working principle of a bipolar junction transistor.
Application Fields
The DXT2014P5-13 is ideal for many industrial and consumer applications, including:
- Computer and Network Technologies
- Security and Automotive Systems
- Wireless and Telecommunications
- Medical, Industrial and Domestic Devices
Due to its ultra-low voltage and low power consumption, the DXT2014P5-13 is an excellent choice for portable and battery-powered applications, as they are able to operate on smaller power supplies with lower energy consumption. The DXT2014P5-13 is also designed to be reliable and durable, providing reliable and long-term operation. The device is created with a low-temperature plastic material, and is RoHS compliant, which makes it suitable for use in hazardous environments such as the medical field.
Working Principle of Bipolar Junction Transistor (BJT)
A bipolar junction transistor (BJT) is a semiconductor device consisting of three terminals - the emitter, collector and base. The terminals are similar to those of a diode; however, the BJT has two pathways of current flow, instead of one. The BJT works by creating a current between the two pathways - the collector and the base. When the base receives a positive voltage, a current is created between the collector and the base, known as the ‘forward bias’. This current causes electrons to flow from the collector to the base, and from the base to the emitter.
The flow of current between the collector and the base is regulated by the base-collector voltage. The amount of current flowing between the two pathways is determined by the ratio of the collector-emitter voltage to the base-collector voltage, called the gain. The gain is adjustable depending on the purpose of the circuit. As the current between the collector and the base increases, the flow of electrons from the base to the emitter increases, and current is supplied to the external circuit.
Conclusion
The DXT2014P5-13 is a single bipolar junction transistor (BJT) device for use in industrial and consumer electronics applications. It features an ultra-low voltage and low power solution, and is suitable for portable and battery-powered applications. The device is reliable and durable, and is RoHS compliant. The working principle of a bipolar junction transistor is discussed, and the device is capable of regulating the current between the collector and the base. This allows it to provide reliable and long-term operation in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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