EDFA112A2PD-GD-F-R TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR3
Memory Size:	16Gb (128M x 128)
Clock Frequency:	800MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.14 V ~ 1.95 V
Operating Temperature:	-30°C ~ 85°C (TC)

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Memory

EDFA112A2PD-GD-F-R TR is a type of solid state memory device that consists of an active layer (or substrate) and a control layer. The active layer is usually made up of an array of field-effect transistors (FETs) and the control layer consists of a metal oxide semiconductor (MOS) layer. The active layer is connected through the control layer which serves as an interface between the active layer and the memory device.The main application field of EDFA112A2PD-GD-F-R TR is in static random access memory (SRAM) where it serves as a dynamic memory cell. It is usually used in small-scale applications like automotive electronics, mobile phones and other hand held devices.The working principle of EDFA112A2PD-GD-F-R TR is based on the dual gate field effect transistor (DG FET). This type of transistor is characterized by two gates, one connected to the source (or drain) and the other connected to the substrate. When the gate electrodes of a dual gate field effect transistor are positively charged, the electric current will flow freely between the source and drain. This can be used for storing data bits in SRAM devices.The EDFA112A2PD-GD-F-R TR device employs a CMOS-based latch arrangement to allow the direct connection of the data and address bits to the dual gate FETs. This is done in order to minimize power and space requirements while still providing high speed operation. The latch arrangement further provides the ability to access data without the need to read it all the time. This capability is especially useful in very small SRAM memories with limited data access frequency and low power consumption.The EDFA112A2PD-GD-F-R TR device also features an embedded writeback capability. Using this feature reduces the power consumption associated with writing data in the SRAM. This is possible because the data is stored in the device\'s internal latch and can then be written back to the memory when needed.In summary, EDFA112A2PD-GD-F-R TR is a solid state memory device that contains an active layer and a control layer. It is primarily used in small-scale applications like automotive electronics and mobile phones. Its main working principle is based on the dual gate field effect transistor, which is characterized by two gates and allows electric current to flow freely between the source and drain, thereby allowing the storage of data bits. Additionally, the device features an embedded writeback capability and latch arrangement, which both reduce power consumption associated with writing data in the SRAM.

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