Allicdata Part #: | EDFA232A2MA-GD-F-RTR-ND |
Manufacturer Part#: |
EDFA232A2MA-GD-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 16G PARALLEL 800MHZ |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 16Gb (512M x 32) P... |
DataSheet: | EDFA232A2MA-GD-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 16Gb (512M x 32) |
Clock Frequency: | 800MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TC) |
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The EDFA232A2MA-GD-F-R TR is a type of memory that has many uses in a wide range of applications. This memory is commonly used in embedded systems, storage systems, medical systems, industrial systems, data centers, and more. It is a completely solid-state memory that is typically used to store data and provide fast and reliable data storage. In this article, we will explore the application field and working principles of the EDFA232A2MA-GD-F-R TR.
The EDFA232A2MA-GD-F-R TR is a type of Flash memory that is based on NAND Flash technology. It is non-volatile and is capable of storing data permanently even when there is no external power supplied. This memory is commonly used in embedded systems and other devices that need to store information for long periods of time. The EDFA232A2MA-GD-F-R TR also has a wide operational temperature range of -40°C to +85°C, making it suitable for use in a variety of environments.
The EDFA232A2MA-GD-F-R TR is an industrial-grade memory that is resistant to shock and vibration, making it reliable and durable. It is also not prone to data errors, which is a common problem with other types of memory. The EDFA232A2MA-GD-F-R TR has a low latency read/write performance and is designed to be highly reliable with minimal wear. It is available in densities up to 4 TB, making it suitable for applications that require large amounts of storage.
The EDFA232A2MA-GD-F-R TR offers a wide range of features that make it suitable for many different applications. It has a fast read/write cycle time as well as a fast random access time. It also has a write endurance of up to 100,000 cycles. Additionally, the EDFA232A2MA-GD-F-R TR has an on-chip ECC and interrupts, making it suitable for use in real-time applications.
The EDFA232A2MA-GD-F-R TR works by using charge-trapping technology to store data in an array of memory cells. This memory is capable of storing data for long periods of time and can be rapidly erased and rewritten in multiple blocks. The cells can be programmed and erased in two different ways – via programming pulses and via erase pulses. When a programming pulse is sent to the memory, the electrons trapped in the memory cells are released, changing the logic state of the cells. Similarly, when an erase pulse is sent, the electrons trapped in the cells are released, changing the logic state to an erased state.
The EDFA232A2MA-GD-F-R TR is a versatile memory that can be used in a wide range of applications. It is most commonly used in embedded systems, storage systems, medical systems, industrial systems, and data centers. It can also be used in automotive and avionic applications, as well as in consumer electronics such as digital cameras, music players, and mobile phones. This memory is reliable, durable, and can store large amounts of data, making it a great choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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EDFA232A2MA-JD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2MA-GD-F-D | Micron Techn... | -- | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2MA-JD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA112A2PD-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA112A2PD-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA112A2PF-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA112A2PF-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2MA-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2MA-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PB-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PF-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2PF-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PH-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2PK-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2PK-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PM-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PM-JDTJ-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA232A2MA-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA232A2MA-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA232A2PB-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA232A2PB-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
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