EDFA112A2PF-JD-F-D Allicdata Electronics
Allicdata Part #:

EDFA112A2PF-JD-F-D-ND

Manufacturer Part#:

EDFA112A2PF-JD-F-D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 16G PARALLEL 933MHZ
More Detail: SDRAM - Mobile LPDDR3 Memory IC 16Gb (128M x 128) ...
DataSheet: EDFA112A2PF-JD-F-D datasheetEDFA112A2PF-JD-F-D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (128M x 128)
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Description

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EDFA112A2PF-JD-F-D, or Erbium Doped Fiber Amplifier 112A2PF-JD-F-D, is an optical amplification device used to boost the signal level of an optical fiber network. It is typically used in high-speed data communication networks such as FTTx, as well as in optical fiber communications, such as ATM, CATV and fiber optic sensor systems.

An EDFA112A2PF-JD-F-D device is composed of two major components: an erbium-doped fiber amplifier (EDFA) and a semiconductor laser diode. The EDFA is a type of lasing oscillator, used to amplify light signals. The semiconductor laser diode is used to excite the erbium molecules in the EDFA, causing them to release additional photons and thus amplifying the signal. The laser also enables the EDFA to produce a specific wavelength of light, which is necessary for data transmission.

The elements of an EDFA112A2PF-JD-F-D device can be customized according to the desired reception or transmission signal power and wavelength. For example, the semiconductor laser can be configured to operate at different wavelengths, such as 1310 nm or 1625 nm, for different signal power requirements and increased signal stability. Additionally, the EDFA can be “pumped” with varying amounts of energy, allowing it to produce more output signal power.

In terms of application fields, an EDFDA112A2PF-JD-F-D is typically used in various optical communication networks to boost the signal level, achieve longer distances over optical fibers, and provide higher data transmission rates. It is also used in various optical fiber applications such as data telemetry and seismic applications in remote sensing. As the signal power of a single optical fiber reduces significantly over long distances, the EDFA can be used to amplify signals over such distances, reducing the effects of signal loss.

In terms of working principles, EDFA112A2PF-JD-F-D amplifies the signal in an optical fiber by introducing erbium-doped fiber into the fiber path. The fiber is specially treated to contain a certain concentration of erbium ions, which can then be “excited” by the light from a semiconductor laser diode. When the erbium ions absorb the laser light, it causes an amplification process that outputs a stronger signal. Specifically, the light from the laser activates the erbium atoms, releasing additional photons from the erbium molecules, which then travel down the optical fiber, boosting the signal power of the incoming data.

In conclusion, the EDFA112A2PF-JD-F-D is a memory device used to amplify signals in optical communication networks and various optical fiber applications. It contains two main components: an erbium-doped fiber amplifier and a semiconductor laser diode, which can be customized to output a specific wavelength and signal power. The EDFA amplifies signals over long distances, reducing signal loss by introducing additional photons released from the erbium molecules.

The specific data is subject to PDF, and the above content is for reference

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