Allicdata Part #: | EDFA164A2MA-JD-F-D-ND |
Manufacturer Part#: |
EDFA164A2MA-JD-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 16G PARALLEL 933MHZ |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 16Gb (256M x 64) P... |
DataSheet: | EDFA164A2MA-JD-F-D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 16Gb (256M x 64) |
Clock Frequency: | 933MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TC) |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
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MemoryThe EDFA164A2MA-JD-F-D (Erbium-Doped Fiber Amplifier) is a device designed to offer signal boosting applications in various memory systems. It has become a widely used device suited for multiple signal-processing requirements in data center and long-haul telecommunications networks. The EDFA164A2MA-JD-F-D amplifier has the capability to provide gain over a broad wavelength range. This makes it an ideal solution for a range of applications, such as increasing the capacity of existing communication networks.
The EDFA164A2MA-JD-F-D amplifier utilizes erbium-doped fiber, which has several unique properties that make it suitable for use in a wide array of memory systems. First, erbium-doped fiber has a lower noise figure than other materials, significantly improving signal-to-noise ratio. This can effectively reduce noise in signal transmissions, making it ideal for use in high-bandwidth applications. Additionally, erbium-doped fiber can offer exceptionally large gains with a high signal-to-noise ratio. For these reasons, the EDFA164A2MA-JD-F-D amplifier has become a popular choice among signal-processing professionals.
The EDFA164A2MA-JD-F-D amplifier is primarily used in memory applications as an optical signal booster. Its primary task is to strengthen an incoming signal by increasing its power, allowing it to travel farther over an existing communication network. This amplification is achieved through a process known as optical amplification. The amplifier is capable of both transmitting and receiving energy at different wavelengths, allowing it to pass or boost data signals over optical cables.
The EDFA164A2MA-JD-F-D amplifier works by converting electrical signals into optical signals before amplifying them. These optical signals are then converted back into electrical signals for further processing. This method of data transmission is advantageous for memory applications, as it offers improved signal-to-noise ratios and high data-transfer speeds. Additionally, the amplifier can be used to connect multiple nodes on the same network, increasing the total available bandwidth.
The EDFA164A2MA-JD-F-D amplifier has many advantages for memory applications. As a result, it has become an increasingly popular choice for boosting signal strength in various data center and long-haul communication systems. Its ability to reduce noise and increase data transmission speeds makes it an excellent device for improving memory performance. Additionally, the EDFA164A2MA-JD-F-D amplifier can be used in a variety of different applications, such as connecting multiple nodes on the same network, increasing the capacity of existing communication networks, and providing signal boosting applications in various memory systems.
The specific data is subject to PDF, and the above content is for reference
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EDFA112A2PD-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA112A2PD-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA112A2PF-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA112A2PF-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2MA-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2MA-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PB-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PF-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2PF-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PH-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2PK-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2PK-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PM-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PM-JDTJ-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA232A2MA-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA232A2MA-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA232A2PB-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
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