Allicdata Part #: | EDFA364A3MA-GD-F-RTR-ND |
Manufacturer Part#: |
EDFA364A3MA-GD-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 16G PARALLEL 800MHZ |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 16Gb (256M x 64) P... |
DataSheet: | EDFA364A3MA-GD-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 16Gb (256M x 64) |
Clock Frequency: | 800MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TC) |
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EDFA364A3MA-GD-F-R TR: Memory Application Field and Working Principle
What comes to mind when you hear Memory application field? The most common association is the idea of a computer\'s memory, but the EDFA364A3MA-GD-F-R TR application field is much more than that. An EDFA364A3MA-GD-F-R TR is a type of memory technology that is designed to store data at a higher capacity than traditional technologies. It is becoming increasingly important in the world of data storage and is being used in a wide variety of applications.
An EDFA364A3MA-GD-F-R TR is a type of non-volatile random access memory (RAM) that can store data even when the power is off. It is divided into blocks of memory, each one storing a certain number of bits. Each block is composed of a row and a column of memory cells, with each cell representing a single bit. The architecture of the EDFA364A3MA-GD-F-R TR allows for higher density storage than traditional RAMs, as it can store up to 8 bits of data in a single cell.
The primary application field of EDFA364A3MA-GD-F-R TRs is data storage. They are used in a wide variety of devices, including digital cameras, mobile phones, flash drives, and hard drives. They are also used in industrial applications, such as in process control systems and robotics. EDFA364A3MA-GD-F-R TRs are highly reliable and can withstand extreme temperature environments, making them ideal for industrial use.
The working principle of an EDFA364A3MA-GD-F-R TR is based on applying an electric current to the cells. Each cell stores either a 0 or 1, depending on the current applied. When the current is applied, an electrical charge is stored in the cell, resulting in either a 0 or 1 being stored. This process is known as "writing" and it determines the data that will be stored in the cell.
Once the data is stored, it has to be read in order to be accessed. This is done by applying a voltage to the cells, which in turn causes the stored data to be released. This process is known as "reading" and it allows data to be retrieved from the cells. This process is simple and fast, making it ideal for applications that require quick access to data.
In conclusion, EDFA364A3MA-GD-F-R TRs are a type of memory technology that offer high density storage and quick data access. They can be used in a variety of devices, from cameras to hard drives, and can withstand extreme temperatures. Their working principle is based on the writing and reading of data from cells using an electric current, making them highly reliable and fast.
The specific data is subject to PDF, and the above content is for reference
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EDFA164A2PK-GD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2PK-JD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA232A2PB-GD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA232A2PB-JD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA232A2PD-GD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA232A2PF-GD-F-D | Micron Techn... | -- | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA232A2MA-GD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA232A2MA-JD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2MA-GD-F-D | Micron Techn... | -- | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2MA-JD-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA112A2PD-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA112A2PD-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA112A2PF-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA112A2PF-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2MA-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2MA-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PB-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PF-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2PF-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PH-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2PK-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA164A2PK-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PM-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA164A2PM-JDTJ-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA232A2MA-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA232A2MA-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
EDFA232A2PB-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 800M... |
EDFA232A2PB-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 933M... |
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